公开(公告)号：US08946057B2

公开(公告)日：2015-02-03

申请号：US13847964

申请日：2013-03-20

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng Lei ,  Mohammad K. Chowdhury ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/67

CPC classification number: H01L21/78 ,  H01L21/67069 ,  H01L21/67207

Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate.

Abstract translation: 描述了使用UV固化粘合剂膜的激光和等离子体蚀刻晶片切割。 在一个示例中，一种方法包括在半导体晶片上形成掩模。 半导体晶片通过UV可固化粘合剂膜耦合到载体衬底。 面罩覆盖并保护集成电路。 用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。 图案化使得集成电路之间的半导体晶片的区域露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以形成单独的集成电路。 然后用紫外线（UV）光照射UV固化粘合剂膜。 然后将分离的集成电路从载体衬底分离。