公开(公告)号：US20240274724A1

公开(公告)日：2024-08-15

申请号：US18414844

申请日：2024-01-17

Applicant: Applied Materials, Inc.

Inventor： Jody A. Fronheiser ,  Sai Hooi Yeong ,  Andre P. Labonte ,  Joseph Francis Shepard, JR. ,  David Collins ,  Ning Li

IPC: H01L29/786 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/78696 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: Horizontal gate-all-around devices and methods of manufacture are described. The hGAA devices comprise a semiconductor material between source regions and drain regions of the device. The method includes formation of a cladding material on a first material followed by forming a tensile film on the cladding layer. The strained tensile film results in a uniform SiGe channel.

公开(公告)号：US11990332B2

公开(公告)日：2024-05-21

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/324

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：US11970777B2

公开(公告)日：2024-04-30

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C01B21/082 ,  C01B32/907 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C01B21/0828 ,  C01B32/907 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536

Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11887847B2

公开(公告)日：2024-01-30

申请号：US17994932

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela A. Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US11732356B2

公开(公告)日：2023-08-22

申请号：US16941843

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC: C23C16/455 ,  C23C16/02 ,  H01L21/56 ,  H10N70/00

CPC classification number: C23C16/45542 ,  C23C16/0209 ,  C23C16/45546 ,  C23C16/45553 ,  H01L21/56 ,  H10N70/023

Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

公开(公告)号：US11713507B2

公开(公告)日：2023-08-01

申请号：US17840797

申请日：2022-06-15

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01L29/78 ,  C23C16/455 ,  C23C16/36

CPC classification number: C23C16/45553 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02274 ,  H01L29/78

Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I)




wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

公开(公告)号：US20230170210A1

公开(公告)日：2023-06-01

申请号：US17994932

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela A. Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US20210265157A1

公开(公告)日：2021-08-26

申请号：US17316124

申请日：2021-05-10

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Maribel Maldonado-Garcia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

公开(公告)号：US20200149161A1

公开(公告)日：2020-05-14

申请号：US16744560

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Steven D. Marcus ,  Tai T. Ngo ,  Kevin Griffin

IPC: C23C16/44 ,  C23C16/455

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

公开(公告)号：US20200006064A1

公开(公告)日：2020-01-02

申请号：US16567044

申请日：2019-09-11

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.