公开(公告)号：US12136549B2

公开(公告)日：2024-11-05

申请号：US16982789

申请日：2019-03-21

Applicant: Applied Materials, Inc.

Inventor： Byung Seok Kwon ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Bushra Afzal ,  Sungwon Ha ,  Vinay K. Prabhakar ,  Viren Kalsekar ,  Satya Teja Babu Thokachichu ,  Edward P. Hammond, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

公开(公告)号：US12027366B2

公开(公告)日：2024-07-02

申请号：US17095037

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: H01L21/02

CPC classification number: H01L21/02518 ,  H01L21/02642

Abstract: Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.

公开(公告)号：US12000048B2

公开(公告)日：2024-06-04

申请号：US18111842

申请日：2023-02-20

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Kwangduk Douglas Lee ,  Sungwon Ha ,  Jian Li

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/4585 ,  C23C16/46

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US11728168B2

公开(公告)日：2023-08-15

申请号：US17220441

申请日：2021-04-01

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC classification number: H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20210159048A1

公开(公告)日：2021-05-27

申请号：US16694062

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

公开(公告)号：US20210143010A1

公开(公告)日：2021-05-13

申请号：US17095037

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.

公开(公告)号：US10727059B2

公开(公告)日：2020-07-28

申请号：US16188514

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Rajesh Prasad ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

公开(公告)号：US12100609B2

公开(公告)日：2024-09-24

申请号：US16848553

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/02 ,  C30B33/12 ,  H01L21/3065

CPC classification number: H01L21/6831 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/32743 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/32136 ,  H01L21/6833 ,  C23C16/0245 ,  C30B33/12 ,  H01J2237/036 ,  H01J2237/32 ,  H01L21/02252 ,  H01L21/3065

Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

公开(公告)号：US12014927B2

公开(公告)日：2024-06-18

申请号：US17963841

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US11469107B2

公开(公告)日：2022-10-11

申请号：US16939316

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.