公开(公告)号：US20230411462A1

公开(公告)日：2023-12-21

申请号：US18460290

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L29/40114 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/42324

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.

公开(公告)号：US20220123114A1

公开(公告)日：2022-04-21

申请号：US17073060

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/423

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å

公开(公告)号：US11784229B2

公开(公告)日：2023-10-10

申请号：US17073060

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/311

CPC classification number: H01L29/40114 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/42324

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.

公开(公告)号：US11646216B2

公开(公告)日：2023-05-09

申请号：US17073071

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Zeqiong Zhao ,  Sang-Jin Kim ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/683 ,  H02N13/00 ,  C25D7/00

CPC classification number: H01L21/6833 ,  C25D7/00 ,  H02N13/00

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

公开(公告)号：US20230274968A1

公开(公告)日：2023-08-31

申请号：US18143895

申请日：2023-05-05

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Zeqiong Zhao ,  Sang-Jin Kim ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/683 ,  H02N13/00 ,  C25D7/00

CPC classification number: H01L21/6833 ,  H02N13/00 ,  C25D7/00

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

公开(公告)号：US20220122872A1

公开(公告)日：2022-04-21

申请号：US17073071

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Zeqiong Zhao ,  Sang-Jin Kim ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/683 ,  C25D7/00 ,  H02N13/00

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

公开(公告)号：US12211908B2

公开(公告)日：2025-01-28

申请号：US18460290

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/423

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.

公开(公告)号：US20220336216A1

公开(公告)日：2022-10-20

申请号：US17235222

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Zeqiong Zhao ,  Allison Yau ,  Sang-Jin Kim ,  Akhil Singhal ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/24 ,  C23C16/40 ,  C23C16/50 ,  C23C16/46 ,  C23C16/56

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the inert gas. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The processing region may be maintained free of helium delivery during the deposition method.