公开(公告)号：US20220375751A1

公开(公告)日：2022-11-24

申请号：US17463966

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau HUANG ,  Songjae Lee ,  Manoj Vellaikal ,  Chen-Ying Wu ,  Eric Davey ,  Saurabh Chopra

IPC: H01L21/02 ,  C30B25/18 ,  C23C16/02 ,  C23C16/54

Abstract: Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

公开(公告)号：US09460918B2

公开(公告)日：2016-10-04

申请号：US14133148

申请日：2013-12-18

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/78

Abstract: Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.

Abstract translation: 本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。 所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。 硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。 大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。 由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

公开(公告)号：US20150040822A1

公开(公告)日：2015-02-12

申请号：US14338245

申请日：2014-07-22

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Theresa K. Guarini ,  Jeffrey Tobin ,  Lara Hawrylchak ,  Peter Stone ,  Chi Wei Lo ,  Saurabh Chopra

IPC: C30B25/18 ,  C30B29/08 ,  C30B29/06

CPC classification number: C30B25/186 ,  C30B29/06 ,  C30B29/08

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract translation: 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括使用等离子体工艺去除设置在衬底表面上的污染物，然后通过使用远程等离子体辅助干蚀刻工艺来清洁衬底表面。

公开(公告)号：US11965241B2

公开(公告)日：2024-04-23

申请号：US17869529

申请日：2022-07-20

Applicant: Applied Materials, Inc.

Inventor： Saurabh Chopra ,  Martin Jeffrey Salinas ,  Masato Ishii ,  Sheng-Chen Twan ,  Srividya Natarajan

IPC: H01L21/67 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/4405 ,  H01L21/0262 ,  H01L21/67207

Abstract: In one aspect, a process operation is conducted at a first pressure in a process chamber, and an epitaxial deposition operation is conducted at an atmospheric pressure in an epitaxial deposition chamber. The atmospheric pressure is greater than the first pressure. The process chamber is mounted to a first mainframe that operates at the first pressure (a reduced pressure), and the epitaxial deposition chamber is mounted to a second mainframe that operates at the atmospheric chamber. In one aspect, the process chamber is a cleaning chamber (such as a pre-clean chamber) and the process operation is a cleaning operation. In one aspect, the process chamber is an atmospheric pressure epitaxial deposition chamber and the process operation is an atmospheric pressure epitaxial deposition operation.

公开(公告)号：US11195923B2

公开(公告)日：2021-12-07

申请号：US16678526

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Gaurav Thareja ,  Xuebin Li ,  Abhishek Dube ,  Yi-Chiau Huang ,  Tushar Vidyadhar Mandrekar ,  Andy Lo ,  Patricia M. Liu ,  Sanjay Natarajan ,  Saurabh Chopra

IPC: H01L21/44 ,  H01L29/40 ,  H01L29/417 ,  H01L21/02 ,  H01L29/08 ,  H01L21/67 ,  H01L29/66 ,  H01L21/285 ,  H01L29/45

Abstract: Implementations of the present disclosure generally relate to methods for forming a transistor. More specifically, implementations described herein generally relate to methods for forming a source/drain contact. In one implementation, the method includes forming a trench in a dielectric material to expose a source/drain region of a transistor, performing a pre-clean process on the exposed source/drain region, forming a doped semiconductor layer on the source/drain region by an epitaxial deposition process, and fill the trench with a conductor. The doped semiconductor layer has a lower electrical resistance than the source/drain region due to a higher dopant concentration in the doped semiconductor layer. As a result, the contact resistance of the source/drain contact is reduced.

公开(公告)号：US10428441B2

公开(公告)日：2019-10-01

申请号：US15627149

申请日：2017-06-19

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Theresa K. Guarini ,  Jeffrey Tobin ,  Lara Hawrylchak ,  Peter Stone ,  Chi Wei Lo ,  Saurabh Chopra

IPC: C30B25/18 ,  C30B29/06 ,  C30B29/08

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US12196617B2

公开(公告)日：2025-01-14

申请号：US17609335

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Zuoming Zhu ,  Shu-Kwan Lau ,  Enle Choo ,  Ala Moradian ,  Flora Fong-Song Chang ,  Maxim D. Shaposhnikov ,  Bindusagar Marath Sankarathodi ,  Zhepeng Cong ,  Zhiyuan Ye ,  Vilen K. Nestorov ,  Surendra Singh Srivastava ,  Saurabh Chopra ,  Patricia M. Liu ,  Errol Antonio C. Sanchez ,  Jenny C. Lin ,  Schubert S. Chu

IPC: G01J5/00 ,  H01L21/67

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

公开(公告)号：US09683308B2

公开(公告)日：2017-06-20

申请号：US14338245

申请日：2014-07-22

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Theresa K. Guarini ,  Jeffrey Tobin ,  Lara Hawrylchak ,  Peter Stone ,  Chi Wei Lo ,  Saurabh Chopra

IPC: C30B25/18 ,  C30B29/06 ,  C30B29/08

CPC classification number: C30B25/186 ,  C30B29/06 ,  C30B29/08

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US12068155B2

公开(公告)日：2024-08-20

申请号：US17396371

申请日：2021-08-06

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying Wu ,  Zhiyuan Ye ,  Xuebin Li ,  Sathya Chary ,  Yi-Chiau Huang ,  Saurabh Chopra

IPC: H01L21/02 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L21/02211 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/04

Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly surfaces with reduced or negligible growth on surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

公开(公告)号：US11948796B2

公开(公告)日：2024-04-02

申请号：US17616131

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau Huang ,  Chen-Ying Wu ,  Abhishek Dube ,  Chia Cheng Chin ,  Saurabh Chopra

IPC: C30B25/10 ,  C23C16/06 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L21/02636 ,  C23C16/06 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/823418 ,  H01L29/0847 ,  H01L21/02381 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/823431 ,  H01L29/785

Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.