公开(公告)号：US20190214229A1

公开(公告)日：2019-07-11

申请号：US15864718

申请日：2018-01-08

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L21/285 ,  H01L27/02

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32788 ,  H01J37/32972 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28518 ,  H01L27/0203 ,  H01L27/10

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

公开(公告)号：US11121002B2

公开(公告)日：2021-09-14

申请号：US16169249

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/4757 ,  H01L21/768

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of a transition-metal-containing material. The methods may also include removing the transition-metal-containing material. The flowing and the contacting may be plasma-free operations.

公开(公告)号：US10861676B2

公开(公告)日：2020-12-08

申请号：US15912404

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber. The methods may further include laterally etching the oxidized metal-containing material lining the portion of the sidewalls of the trench.

公开(公告)号：US10854426B2

公开(公告)日：2020-12-01

申请号：US15864718

申请日：2018-01-08

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

公开(公告)号：US20190214230A1

公开(公告)日：2019-07-11

申请号：US15912404

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L27/02 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32788 ,  H01J37/32972 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28518 ,  H01L27/0203 ,  H01L27/10

Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber. The methods may further include laterally etching the oxidized metal-containing material lining the portion of the sidewalls of the trench.