公开(公告)号：US09114479B2

公开(公告)日：2015-08-25

申请号：US14229238

申请日：2014-03-28

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

IPC: B23K26/00 ,  B23K26/06 ,  F27B17/00 ,  H01L21/67 ,  B23K26/12

CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US09812328B2

公开(公告)日：2017-11-07

申请号：US15189768

申请日：2016-06-22

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Er-Xuan Ping ,  Xianmin Tang ,  Sundar Ramamurthy ,  Randhir Thakur

IPC: H01L21/4763 ,  H01L21/285 ,  H01L23/485 ,  H01L23/532

CPC classification number: H01L21/28518 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53219

Abstract: Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.

公开(公告)号：US09947578B2

公开(公告)日：2018-04-17

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Yu Lei ,  Vikash Banthia ,  Kai Wu ,  Xinyu Fu ,  Yi Xu ,  Kazuya Daito ,  Feiyue Ma ,  Pulkit Agarwal ,  Chi-Chou Lin ,  Dien-Yeh Wu ,  Guoqiang Jian ,  Wei V. Tang ,  Jonathan Bakke ,  Mei Chang ,  Sundar Ramamurthy

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/311 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08 ,  C23C16/505 ,  C23C16/54

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US09595459B2

公开(公告)日：2017-03-14

申请号：US14832564

申请日：2015-08-21

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph M. Ranish ,  Aaron Muir Hunter

IPC: H01L21/67 ,  B23K26/06 ,  B23K26/00 ,  B23K26/08 ,  F27B17/00 ,  B23K26/12

CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US10354882B2

公开(公告)日：2019-07-16

申请号：US15963451

申请日：2018-04-26

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Xianmin Tang ,  Sundar Ramamurthy ,  Jerome Machillot

IPC: H01L21/285 ,  H01L21/324

Abstract: Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.

公开(公告)号：US20180315609A1

公开(公告)日：2018-11-01

申请号：US15963451

申请日：2018-04-26

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Xianmin Tang ,  Sundar Ramamurthy ,  Jerome Machillot

IPC: H01L21/285 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/2855 ,  H01L21/324

Abstract: Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.

公开(公告)号：US08888916B2

公开(公告)日：2014-11-18

申请号：US14088013

申请日：2013-11-22

Applicant: Applied Materials, Inc.

Inventor： Ming-Kuei (Michael) Tseng ,  Norman L. Tam ,  Yoshitaka Yokota ,  Agus S. Tjandra ,  Robert Navasca ,  Mehran Behdjat ,  Sundar Ramamurthy ,  Kedarnath Sangam ,  Alexander N. Lerner

IPC: C23C16/00 ,  H01L21/00 ,  H01L21/67 ,  F27D7/06

CPC classification number: H01L21/67115 ,  F27D7/06 ,  H01L21/67017 ,  H01L21/67098

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract translation: 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。