公开(公告)号：US11422096B2

公开(公告)日：2022-08-23

申请号：US17106555

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Weimin Li ,  Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

IPC: G01N21/956 ,  G03F1/24 ,  G03F7/20

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

公开(公告)号：US20210333703A1

公开(公告)日：2021-10-28

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US20200333700A1

公开(公告)日：2020-10-22

申请号：US16850665

申请日：2020-04-16

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G03F7/20 ,  G02B5/08

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US20220221786A1

公开(公告)日：2022-07-14

申请号：US17708593

申请日：2022-03-30

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G02B5/08 ,  G03F7/20

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US11789358B2

公开(公告)日：2023-10-17

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US11720013B2

公开(公告)日：2023-08-08

申请号：US17708593

申请日：2022-03-30

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G02B5/08 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F1/24 ,  G02B5/0891 ,  G03F7/7015 ,  G03F7/70316

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US11327394B2

公开(公告)日：2022-05-10

申请号：US16850665

申请日：2020-04-16

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G03F7/20 ,  G02B5/08

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US11604151B2

公开(公告)日：2023-03-14

申请号：US17747639

申请日：2022-05-18

Applicant: Applied Materials, Inc.

Inventor： Weimin Li ,  Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

IPC: G01N21/956 ,  G03F7/20 ,  G03F1/24

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

公开(公告)号：US20220170866A1

公开(公告)日：2022-06-02

申请号：US17106555

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Weimin Li ,  Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

IPC: G01N21/956 ,  G03F1/24 ,  G03F7/20

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.