公开(公告)号：US11170994B1

公开(公告)日：2021-11-09

申请号：US17147454

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Jung Chan Lee ,  Praket P. Jha ,  Jingmei Liang ,  Jinrui Guo ,  Wenhui Li

IPC: H01L21/02 ,  H01L21/311

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

公开(公告)号：US20240332005A1

公开(公告)日：2024-10-03

申请号：US18192563

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Wenhui Li ,  Bo Xie ,  Li-Qun Xia ,  Prayudi Lianto ,  Shanshan Yao

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  H01L21/02167 ,  H01L21/0234

Abstract: Embodiments include semiconductor processing methods to form dielectric films on semiconductor substrates are described. The methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include providing an inert precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The methods may include depositing a silicon-containing material on the substrate.

公开(公告)号：US11804372B2

公开(公告)日：2023-10-31

申请号：US17522403

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Jung Chan Lee ,  Praket P. Jha ,  Jingmei Liang ,  Jinrui Guo ,  Wenhui Li

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02274 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/31116

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

公开(公告)号：US20230352349A1

公开(公告)日：2023-11-02

申请号：US18349930

申请日：2023-07-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01L21/02164 ,  C23C16/52 ,  C23C16/401 ,  H01L21/67288

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US20220223410A1

公开(公告)日：2022-07-14

申请号：US17522403

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Jung Chan Lee ,  Praket P. Jha ,  Jingmei Liang ,  Jinrui Guo ,  Wenhui Li

IPC: H01L21/02 ,  H01L21/311

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

公开(公告)号：US20220115275A1

公开(公告)日：2022-04-14

申请号：US17070751

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US12300554B2

公开(公告)日：2025-05-13

申请号：US18349930

申请日：2023-07-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  C23C16/40 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US11699623B2

公开(公告)日：2023-07-11

申请号：US17070751

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  H01L21/67

CPC classification number: H01L22/20 ,  C23C16/401 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/67288

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US20220375747A1

公开(公告)日：2022-11-24

申请号：US17325764

申请日：2021-05-20

Applicant: Applied Materials, Inc.

Inventor： Wenhui Li ,  Praket P. Jha ,  Mandar B. Pandit ,  Man-Ping Cai ,  Jingmei Liang ,  Michael Wenyoung Tsiang

IPC: H01L21/02

Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.