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    Substrate support with symmetrical feed structure
    1.
    发明授权
    Substrate support with symmetrical feed structure 有权

    公开(公告)号：US10770328B2

    公开(公告)日：2020-09-08

    申请号：US16121844

    申请日：2018-09-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Andrew Nguyen ,  Anchel Sheyner

    IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

    Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

    Substrate support with symmetrical feed structure
    3.
    发明授权
    Substrate support with symmetrical feed structure 有权

    公开(公告)号：US10096494B2

    公开(公告)日：2018-10-09

    申请号：US14840204

    申请日：2015-08-31

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Xing Lin ,  Douglas A. Buchberger ,  Xiaoping Zhou ,  Andrew Nguyen ,  Anchel Sheyner

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

    Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

    Ceramic heater with enhanced RF power delivery
    7.
    发明授权
    Ceramic heater with enhanced RF power delivery 有权

    公开(公告)号：US10692703B2

    公开(公告)日：2020-06-23

    申请号：US15463020

    申请日：2017-03-20

    Applicant: Applied Materials, Inc.

    Inventor： Xing Lin ,  Jianhua Zhou ,  Ningli Liu ,  Juan Carlos Rocha-Alvarez

    IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505

    Abstract: Embodiments of the present disclosure generally relate to a substrate support assembly in a semiconductor processing chamber. The semiconductor processing chamber may be a PECVD chamber including a substrate support assembly having a substrate support and a stem coupled to the substrate support. An RF electrode is embedded in the substrate support and a rod is coupled to the RF electrode. The rod is made of titanium (Ti) or of nickel (Ni) coated with gold (Au), silver (Ag), aluminum (Al), or copper (Cu). The rod made of Ti or of Ni coated with Au, Ag, Al or Cu has a reduced electrical resistivity and increased skin depth, which minimizes heat generation as RF current travels through the rod.

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