公开(公告)号：US11939668B2

公开(公告)日：2024-03-26

申请号：US17729943

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Mohammed Jaheer Sherfudeen ,  David Matthew Santi ,  Jallepally Ravi ,  Peiqi Wang ,  Kai Wu

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

公开(公告)号：USD1009817S1

公开(公告)日：2024-01-02

申请号：US29809532

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Designer： Zubin Huang ,  Srinivas Tokur Mohana ,  Shreyas Patil Shanthaveeraswamy ,  Sandesh Yadamane ,  Jallepally Ravi ,  Harpreet Singh ,  Manjunatha Koppa

Abstract: FIG. 1 is a front isometric top left-side view of a shadow ring lift pin.
FIG. 2 is a front isometric bottom left-side view thereof.
FIG. 3 is a left-side view thereof.
FIG. 4 is a front-side view thereof.
FIG. 5 is a right-side view thereof.
FIG. 6 is a back-side view thereof.
FIG. 7 is a top plan view thereof.
FIG. 8 is a bottom plan view thereof; and,
FIG. 9 is an enlarged partial view of the section 9 shown in FIG. 4.
The broken lines in the drawings illustrate portions of the shadow ring lift pin that form no part of the claimed design.

公开(公告)号：USD997894S1

公开(公告)日：2023-09-05

申请号：US29809534

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Designer： Zubin Huang ,  Srinivas Tokur Mohana ,  Shreyas Patil Shanthaveeraswamy ,  Sandesh Yadamane ,  Jallepally Ravi ,  Harpreet Singh ,  Manjunatha Koppa

Abstract: FIG. 1 is a back isometric top left-side view of a shadow ring lift assembly.
FIG. 2 is a back isometric bottom left-side view thereof.
FIG. 3 is a top plan view thereof.
FIG. 4 is a bottom plan view thereof.
FIG. 5 is a back-side view thereof.
FIG. 6 is a front-side view thereof.
FIG. 7 is a left-side view thereof; and,
FIG. 8 is a right-side view thereof.
The broken lines in the drawings illustrate portions of the shadow ring lift assembly that form no part of the claimed design.

公开(公告)号：US11532525B2

公开(公告)日：2022-12-20

申请号：US17191026

申请日：2021-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Anton V Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/66 ,  G05B13/04 ,  G05B13/02 ,  H01L21/67

Abstract: Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

公开(公告)号：US20210143029A1

公开(公告)日：2021-05-13

申请号：US17094969

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Diwakar Kedlaya ,  Fang Ruan ,  Zubin Huang ,  Ganesh Balasubramanian ,  Kaushik Alayavalli ,  Martin Seamons ,  Kwangduk Lee ,  Rajaram Narayanan ,  Karthik Janakiraman

IPC: H01L21/67 ,  C23C16/52 ,  G01N21/25 ,  G01N21/3504

Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

公开(公告)号：US10513008B2

公开(公告)日：2019-12-24

申请号：US15699645

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Stephen A. Wells ,  Ramesh Gopalan ,  Gangadhar Sheelavant ,  Simon Yavelberg

IPC: B24B37/32 ,  B24B37/04 ,  B24B37/34 ,  G01H11/06 ,  G08C17/02 ,  H04Q9/00 ,  G01H1/00

Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, and a sensor assembly. The retaining ring is coupled to the body. The sensor assembly is positioned at least partially in the body. The sensor assembly includes a transmitter, an antenna, and a vibrational sensor. The transmitter has a first end and a second end. The antenna is coupled to the first end of the transmitter. The vibrational sensor is coupled to the second end. The vibrational sensor is configured to detect vibration during chemical mechanical processes with respect to radial, azimuthal, and angular axes of the carrier head.

公开(公告)号：US11315787B2

公开(公告)日：2022-04-26

申请号：US16821759

申请日：2020-03-17

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun Yang ,  Rui Cheng ,  Karthik Janakiraman ,  Zubin Huang ,  Diwakar Kedlaya ,  Meenakshi Gupta ,  Srinivas Guggilla ,  Yung-chen Lin ,  Hidetaka Oshio ,  Chao Li ,  Gene Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.

公开(公告)号：US20220108872A1

公开(公告)日：2022-04-07

申请号：US17063366

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Diwakar Kedlaya ,  Rui Cheng ,  Truong Van Nguyen ,  Manjunath Patil ,  Pavan Kumar Murali Kumar ,  Subrahmanyam Veerisetty ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/50 ,  C23C16/56

Abstract: Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate defining a plurality of channels through an interior of the support plate. Each channel of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an exterior region of the support plate fluidly coupling the radial portion with a support surface of the support plate. The substrate support may include a shaft coupled with the support plate. The central channel may extend through the shaft. The systems may include a fluid source coupled with the central channel of the substrate support.

公开(公告)号：US20220093371A1

公开(公告)日：2022-03-24

申请号：US17026885

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya ,  Manjunath Veerappa Chobari Patil ,  Prashant A. Desai ,  Paul L. Brillhart ,  Karthik Janakiraman ,  Pavan Kumar Murali Kumar

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.

公开(公告)号：US20220020583A1

公开(公告)日：2022-01-20

申请号：US16932793

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/24

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.