公开(公告)号：US09448253B2

公开(公告)日：2016-09-20

申请号：US14719193

申请日：2015-05-21

Applicant: Applied Materials Israel, Ltd.

Inventor： Konstantin Chirko ,  Alon Litman

IPC: H01J37/00 ,  G01Q60/30 ,  G01Q30/02 ,  H01J37/28

CPC classification number: G01Q60/30 ,  G01Q30/02 ,  H01J37/28 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

Abstract translation: 一种用于评估具有纳米尺度宽度并形成在衬底中的高纵横比（HAR）孔的系统，方法和非暂时计算可读介质，包括在照明周期期间通过静电测量装置获得多个测量结果， 包括放置在靠近HAR孔的探针尖端; 其中所述HAR孔内的多个位置在照明周期期间用带电粒子束照射; 并处理多个测量结果以确定HAR孔的状态。

公开(公告)号：US20250095955A1

公开(公告)日：2025-03-20

申请号：US18370303

申请日：2023-09-19

Applicant: Applied Materials Israel Ltd.

Inventor： Konstantin Chirko ,  Itamar Shani ,  Lior Yaron ,  Guy Eytan

IPC: H01J37/26 ,  G01N23/203 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: Disclosed are method and system for calibrating a tilt angle of an electron beam of a backscattered scanning electron microscope including scanning a bare wafer at a plurality of electron beam tilt and azimuth angles, thereby obtaining a calibration map representing a crystal orientation of the bare wafer, selecting a tilt angle and defining an expected diffraction pattern associated with the tilt angle, based on the calibration map; scanning a patterned wafer at the selected tilt angle, comparing the diffraction pattern of the image obtained from the scanning of the patterned wafer at the selected tilt angle with the expected diffraction pattern; correcting the tilt angle of the electron beam of the BSEM tool, such that the diffraction pattern of the image obtained during scanning of the patterned wafer will align with the expected diffraction pattern.

公开(公告)号：US20240404784A1

公开(公告)日：2024-12-05

申请号：US18203034

申请日：2023-05-29

Applicant: Applied Materials Israel Ltd.

Inventor： Itamar Shani ,  Konstantin Chirko ,  Lior Yaron ,  Guy Eytan ,  Guy Shwartz

IPC: H01J37/28 ,  G06T11/00 ,  G06T11/20

Abstract: Disclosed herein is a system for non-destructive tomography of specimens. The system includes a scanning electron microscope (SEM) and a processor(s). The SEM is configured to obtain a sinogram of a tested specimen, parameterized by a vector {right arrow over (s)}, by projecting e-beams on the tested specimen, at each of a plurality of projection directions and offsets, and. for each e-beam, measuring a respective intensity of electrons returned from the tested specimen, The processor(s) is configured to obtain a tomographic map, pertaining to the tested specimen, by determining values indicative of components of a vector {right arrow over (t)} defined by an equation W{right arrow over (t)}={right arrow over (s)}. W is a matrix with components wij specifying a contribution of a j-th voxel in a nominal specimen to an i-th element of a nominal sinogram of the nominal specimen. The matrix W accounts for e-beam expansion and attenuation with depth within the nominal specimen.

公开(公告)号：US20150362524A1

公开(公告)日：2015-12-17

申请号：US14719193

申请日：2015-05-21

Applicant: Applied Materials Israel, Ltd.

Inventor： Konstantin Chirko ,  Alon Litman

IPC: G01Q60/30

CPC classification number: G01Q60/30 ,  G01Q30/02 ,  H01J37/28 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

Abstract translation: 一种用于评估具有纳米尺度宽度并形成在衬底中的高纵横比（HAR）孔的系统，方法和非暂时计算可读介质，包括在照明周期期间通过静电测量装置获得多个测量结果， 包括放置在靠近HAR孔的探针尖端; 其中所述HAR孔内的多个位置在照明周期期间用带电粒子束照射; 并处理多个测量结果以确定HAR孔的状态。

公开(公告)号：US10903044B1

公开(公告)日：2021-01-26

申请号：US16789348

申请日：2020-02-12

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alon Litman ,  Konstantin Chirko ,  Yehuda Zur

IPC: H01J37/28 ,  H01L27/108 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of evaluating a region of a sample that includes an array of holes separated by solid portions. The method includes positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB); injecting a deposition gas onto the sample; scanning, with a first charged particle beam, a portion of the sample that includes a plurality of holes in the array of holes to locally deposit material within the plurality of holes in the scanned portion from the deposition gas; and milling, with the FIB column, the portion of the sample that includes the plurality of holes in which the material was locally deposited.

公开(公告)号：US10714306B2

公开(公告)日：2020-07-14

申请号：US16005278

申请日：2018-06-11

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Konstantin Chirko ,  Orit Hava Armon Hershkovich

IPC: H01J37/26 ,  H01L21/66

Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

公开(公告)号：US20190378683A1

公开(公告)日：2019-12-12

申请号：US16005278

申请日：2018-06-11

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Konstantin Chirko ,  Orit Hava Armon Hershkovich

IPC: H01J37/26 ,  H01L21/66

Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

公开(公告)号：US09632044B1

公开(公告)日：2017-04-25

申请号：US15059063

申请日：2016-03-02

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alon Litman ,  Konstantin Chirko

IPC: G01N23/225 ,  H01L21/67 ,  H01L21/66

CPC classification number: G01N23/2251 ,  G01N2223/6116 ,  H01L22/12

Abstract: A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from exiting the hole; (b) irradiating, by a probing electron beam, an area of an upper surface of the dielectric medium; (c) collecting electrons emitted from the area of the upper surface as a result of the irradiation of the area by the probing electron beam to provide collected electrons; and (d) determining an energy of at least one of the collected electrons to provide a test result.

公开(公告)号：US20240249909A1

公开(公告)日：2024-07-25

申请号：US18099169

申请日：2023-01-19

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Konstantin Chirko

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/305

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/222 ,  H01J37/3056 ,  H01J2237/31749

Abstract: A method of evaluating, with an evaluation tool that includes a first charged particle column, a region of interest on a sample that includes an array of holes separated by solid portions, the method comprising: positioning the sample such that the region of interest is under a field of view of the first charged particle column; and locally depositing material within the array of holes in the region of interest by: pulsing a flow of deposition gas to the region of interest by turning the flow of the deposition gas ON and then OFF; thereafter, scanning a charged particle beam generated by the first charged particle column across the region of interest; and iteratively repeating the pulsing and scanning steps a plurality of times to locally deposit material within the array of holes in the region of interest.

公开(公告)号：US11953316B2

公开(公告)日：2024-04-09

申请号：US17024578

申请日：2020-09-17

Applicant: Applied Materials Israel Ltd.

Inventor： Rafael Bistritzer ,  Anna Levant ,  Moshe Eliasof ,  Michael Chemama ,  Konstantin Chirko

IPC: H01J37/147 ,  G01B15/02 ,  G01N23/2251

CPC classification number: G01B15/02 ,  G01N23/2251 ,  H01J37/1478 ,  G01N2223/401 ,  G01N2223/6116 ,  G01N2223/6462 ,  H01J2237/1506

Abstract: There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.