公开(公告)号：US08975671B2

公开(公告)日：2015-03-10

申请号：US13521141

申请日：2011-01-10

Applicant: Arnd Ten Have

Inventor： Arnd Ten Have

IPC: H01L29/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.

Abstract translation: 半导体部件设置有半导体基板，其上表面通过离子注入引入由第一导电类型的材料制成的有源区。 具有限定长度和宽度的半导体沟道区域设计在有源区域内。 位于纵向延伸部中的通道区域的每个端部之后是由第二导电类型的半导体材料制成的接触区域。 沟道区域被离子注入掩模材料覆盖，离子注入掩模材料包括限定沟道区域的长度的横向边缘和限定沟道区域的宽度的纵向边缘，并且其包括在与纵向方向对准的每个相对的横向边缘处的边缘凹部 通道区域的延伸端，与通道区域相邻的接触区域一直延伸到所述边缘凹部中。

公开(公告)号：US20130087864A1

公开(公告)日：2013-04-11

申请号：US13521141

申请日：2011-01-10

Applicant: Arnd Ten Have

Inventor： Arnd Ten Have

IPC: B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.

Abstract translation: 半导体部件设置有半导体基板，其上表面通过离子注入引入由第一导电类型的材料制成的有源区。 具有限定长度和宽度的半导体沟道区域设计在有源区域内。 位于纵向延伸部中的通道区域的每个端部之后是由第二导电类型的半导体材料制成的接触区域。 沟道区域被离子注入掩模材料覆盖，离子注入掩模材料包括限定沟道区域的长度的横向边缘和限定沟道区域的宽度的纵向边缘，并且其包括在与纵向方向对准的每个相对的横向边缘处的边缘凹部 通道区域的延伸端，与通道区域相邻的接触区域一直延伸到所述边缘凹部中。

公开(公告)号：US08994128B2

公开(公告)日：2015-03-31

申请号：US13521158

申请日：2011-01-10

Applicant: Arnd Ten Have

Inventor： Arnd Ten Have

IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

Abstract translation: 微机电半导体部件设置有半导体基板，其中形成有由侧壁和顶壁和底壁限定的空腔。 为了形成与半导体衬底的区域的柔性连接，顶壁或底壁在空腔周围设置有沟槽，并且在所述沟槽之间形成弯曲腹板。 在至少一个所述弯曲腹板内形成至少一个对机械应力敏感的测量元件。 在由沟槽围绕的中心区域内，顶壁或底壁包括减少中心区域的质量的多个凹陷和分开凹陷的多个加强支架。

公开(公告)号：US20130087865A1

公开(公告)日：2013-04-11

申请号：US13521158

申请日：2011-01-10

Applicant: Arnd Ten Have

Inventor： Arnd Ten Have

IPC: B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

Abstract translation: 微机电半导体部件设置有半导体基板，其中形成有由侧壁和顶壁和底壁限定的空腔。 为了形成与半导体衬底的区域的柔性连接，顶壁或底壁在空腔周围设置有沟槽，并且在所述沟槽之间形成弯曲腹板。 在至少一个所述弯曲腹板内形成至少一个对机械应力敏感的测量元件。 在由沟槽围绕的中心区域内，顶壁或底壁包括减少中心区域的质量的多个凹陷和分开凹陷的多个加强支架。