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公开(公告)号：US20190186037A1
公开(公告)日：2019-06-20
申请号：US15867878
申请日：2018-01-11
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor： Cheng-Hung Shih , Tsuo-Yun Chu , Xin-Wei Lo , Nian-Cih Yang
Abstract: An electroplating system for depositing a plating material on an object includes a pressure device and an anode element. The pressure device includes a lid having first and second through holes and a base having a chamber, conduction holes and third through holes located in the chamber. Each of the conduction tubes includes a conduction hole connecting to one of the third through holes. The lid covers the chamber, the first through holes communicate with the chamber for spraying an electroplating solution toward the object and the second through holes reveal the conduction holes. A passage of electric force line is formed in the connected holes and the third through holes filled with the electroplating solution, and the anode element is located outside the passage of electric force line. The electroplating system can prevent defective plating and enhance plating efficiency.
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Patent Agency Ranking
公开(公告)号：US11056555B2
公开(公告)日：2021-07-06
申请号：US16885461
申请日：2020-05-28
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor： Cheng-Hung Shih , Nian-Cih Yang , Yi-Cheng Chen , Shang-Jan Yang
Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
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公开(公告)号：US10808331B2
公开(公告)日：2020-10-20
申请号：US15867878
申请日：2018-01-11
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor： Cheng-Hung Shih , Tsuo-Yun Chu , Xin-Wei Lo , Nian-Cih Yang
Abstract: An electroplating system for depositing a plating material on an object includes a pressure device and an anode element. The pressure device includes a lid having first and second through holes and a base having a chamber, conduction holes and third through holes located in the chamber. Each of the conduction tubes includes a conduction hole connecting to one of the third through holes. The lid covers the chamber, the first through holes communicate with the chamber for spraying an electroplating solution toward the object and the second through holes reveal the conduction holes. A passage of electric force line is formed in the connected holes and the third through holes filled with the electroplating solution, and the anode element is located outside the passage of electric force line. The electroplating system can prevent defective plating and enhance plating efficiency.
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公开(公告)号：US10168582B1
公开(公告)日：2019-01-01
申请号：US15841424
申请日：2017-12-14
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor： Chun-Yang Su , Jhao-Shin Wang , Nian-Cih Yang , Xin-Wei Lo
IPC: H01L23/495 , G02F1/1339 , H01L23/00 , H01L23/31 , H01L23/367 , H01L23/498
Abstract: A chip package includes a flexible substrate, a chip, a pressure-proof member and a reinforcement sheet. The chip and the pressure-proof member are located on a first surface of the flexible substrate, and the reinforcement sheet is located on a second surface of the flexible substrate. The pressure-proof member at least includes a pair of pressure-proof ribs which are located outside of the chip oppositely. The pressure-proof ribs located outside the chip can protect the chip from the damage caused by the pressure of other component (e.g. curved panel) except the chip package.
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公开(公告)号：US20200295123A1
公开(公告)日：2020-09-17
申请号：US16885461
申请日：2020-05-28
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor： Cheng-Hung Shih , Nian-Cih Yang , Yi-Cheng Chen , Shang-Jan Yang
Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
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公开(公告)号：US20200266262A1
公开(公告)日：2020-08-20
申请号：US16401736
申请日：2019-05-02
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor： Cheng-Hung Shih , Nian-Cih Yang , Yi-Cheng Chen , Shang-Jan Yang
Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
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