公开(公告)号：US20190208170A1

公开(公告)日：2019-07-04

申请号：US16352651

申请日：2019-03-13

Applicant: Cista System Corp.

Inventor： Hirofumi Komori ,  Dennis Tunglin Lee ,  Guangbin Zhang ,  Jingzhou Zhang

IPC: H04N9/04 ,  H04N5/3745 ,  H04N5/355 ,  H01L27/146 ,  G06T3/40 ,  H04N5/378

CPC classification number: H04N9/045 ,  G06T3/4015 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/37457 ,  H04N5/378

Abstract: A high dynamic range sensing device is disclosed. The device may comprise an array of Bayer-pattern units of color filters, each of the color filters corresponding to a pixel of the sensing device, and each of the color filters overlapping with a plurality of photodiodes.

公开(公告)号：US09876045B2

公开(公告)日：2018-01-23

申请号：US15134181

申请日：2016-04-20

Applicant: CISTA SYSTEM CORP.

Inventor： Hirofumi Komori ,  Jingyi Bai

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.

公开(公告)号：US10444415B2

公开(公告)日：2019-10-15

申请号：US15432629

申请日：2017-02-14

Applicant: CISTA SYSTEM CORP.

Inventor： Zhaojian Li ,  Hirofumi Komori

IPC: G02B5/20 ,  G06T3/40 ,  G02B3/00 ,  H04N9/04

Abstract: A multispectral sensing device is disclosed. The sensing device may comprise an array of pixel units. Each of the pixel units may comprise four pixels in a two by two configuration. Each of the pixels may comprise a plurality of sub-pixels. Each of the pixel units may include at least one pixel that includes at least two sub-pixels configured to detect light of different wavelengths.

公开(公告)号：US10741602B2

公开(公告)日：2020-08-11

申请号：US15833553

申请日：2017-12-06

Applicant: CISTA SYSTEM CORP.

Inventor： Hirofumi Komori ,  Jingyi Bai

IPC: H01L27/146

Abstract: An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.

公开(公告)号：US20180097025A1

公开(公告)日：2018-04-05

申请号：US15833553

申请日：2017-12-06

Applicant: CISTA SYSTEM CORP.

Inventor： Hirofumi Komori ,  Jingyi Bai

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.

公开(公告)号：US11678063B2

公开(公告)日：2023-06-13

申请号：US17096717

申请日：2020-11-12

Applicant: CISTA SYSTEM CORP.

Inventor： Hirofumi Komori ,  Zhaojian Li

IPC: H04N5/235 ,  G01J3/02 ,  G01J3/28 ,  G01J3/36 ,  H04N5/33 ,  H04N5/347 ,  H04N5/355 ,  H04N9/07 ,  H04N23/741 ,  H04N23/11 ,  H04N23/12 ,  H04N25/46 ,  H04N25/583

CPC classification number: H04N23/741 ,  G01J3/0208 ,  G01J3/2803 ,  G01J3/36 ,  H04N23/11 ,  H04N23/12 ,  H04N25/46 ,  H04N25/583 ,  G01J2003/2806

Abstract: A high dynamic range sensing device is disclosed. The device includes an array of Bayer pattern units. Each of the Bayer pattern units comprises a plurality of pixels and each of the plurality of pixels comprises a plurality of photodiodes. At least one of the plurality of photodiodes in each pixel is configured to detect near infrared (NIR) light and at least one of the plurality of photodiodes in each of the plurality of pixels is configured to detect visible light.

公开(公告)号：US10306191B2

公开(公告)日：2019-05-28

申请号：US15363873

申请日：2016-11-29

Applicant: Cista System Corp.

Inventor： Hirofumi Komori ,  Dennis Tunglin Lee ,  Guangbin Zhang ,  Jingzhou Zhang

IPC: H04N9/04 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745 ,  H01L27/146 ,  G06T3/40

Abstract: A high dynamic range sensing device is disclosed. The device may comprise an array of Bayer-pattern units of color filters, each of the color filters corresponding to a pixel of the sensing device, and each of the color filters overlapping with a plurality of photodiodes.

公开(公告)号：US20180152677A1

公开(公告)日：2018-05-31

申请号：US15363873

申请日：2016-11-29

Applicant: Cista System Corp.

Inventor： Hirofumi Komori ,  Dennis Tunglin Lee ,  Guangbin Zhang ,  Jingzhou Zhang

IPC: H04N9/04 ,  G06T3/40 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N9/045 ,  G06T3/4015 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/37457 ,  H04N5/378

Abstract: A high dynamic range sensing device is disclosed. The device may comprise an array of Bayer-pattern units of color filters, each of the color filters corresponding to a pixel of the sensing device, and each of the color filters overlapping with a plurality of photodiodes.

公开(公告)号：US10986316B2

公开(公告)日：2021-04-20

申请号：US16352651

申请日：2019-03-13

Applicant: Cista System Corp.

Inventor： Hirofumi Komori ,  Dennis Tunglin Lee ,  Guangbin Zhang ,  Jingzhou Zhang

IPC: H04N9/04 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745 ,  H01L27/146 ,  G06T3/40

Abstract: A high dynamic range sensing device is disclosed. The device may comprise an array of Bayer-pattern units of color filters, each of the color filters corresponding to a pixel of the sensing device, and each of the color filters overlapping with a plurality of photodiodes.

公开(公告)号：US10698142B2

公开(公告)日：2020-06-30

申请号：US16555505

申请日：2019-08-29

Applicant: CISTA SYSTEM CORP.

Inventor： Zhaojian Li ,  Hirofumi Komori

IPC: G02B5/20 ,  G06T3/40 ,  G02B3/00 ,  H04N9/04

Abstract: A multispectral sensing device is disclosed. The sensing device may comprise an array of pixel units. Each of the pixel units may comprise four pixels in a two by two configuration. Each of the pixels may comprise a plurality of sub-pixels. Each of the pixel units may include at least one pixel that includes at least two sub-pixels configured to detect light of different wavelengths.