公开(公告)号：US09685386B2

公开(公告)日：2017-06-20

申请号：US14403565

申请日：2013-09-04

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaodong He

IPC: H01L23/552 ,  H01L21/66 ,  H01L29/78 ,  H01L23/522

CPC classification number: H01L22/34 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/552 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a semiconductor test structure for MOSFET noise testing. The semiconductor test structure includes: a MOSFET device having a first conductivity type formed on a first well region of a semiconductor substrate; a metal shielding layer formed on the MOSFET device, the metal shielding layer completely covering the MOSFET device and extending beyond the circumference of the first well region; a deep well region having a second conductivity type formed in the semiconductor substrate close to the bottom surface of the first well region, the deep well region extending beyond the circumference of the first well region; wherein a vertical via is formed between the portion of the metal shielding layer extending beyond the first well region and the portion of the deep well region extending beyond the first well region to couple the metal shielding layer to the deep well region. The metal shielding layer is used to be connected to the ground terminal of a testing machine during testing, and the first conductivity type and the second conductivity type are opposite conductivity types.

公开(公告)号：US20150221568A1

公开(公告)日：2015-08-06

申请号：US14403565

申请日：2013-09-04

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaodong He

IPC: H01L21/66 ,  H01L23/522 ,  H01L29/78 ,  H01L23/552

CPC classification number: H01L22/34 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/552 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a semiconductor test structure for MOSFET noise testing. The semiconductor test structure includes: a MOSFET device having a first conductivity type formed on a first well region of a semiconductor substrate; a metal shielding layer formed on the MOSFET device, the metal shielding layer completely covering the MOSFET device and extending beyond the circumference of the first well region; a deep well region having a second conductivity type formed in the semiconductor substrate close to the bottom surface of the first well region, the deep well region extending beyond the circumference of the first well region; wherein a vertical via is formed between the portion of the metal shielding layer extending beyond the first well region and the portion of the deep well region extending beyond the first well region to couple the metal shielding layer to the deep well region. The metal shielding layer is used to be connected to the ground terminal of a testing machine during testing, and the first conductivity type and the second conductivity type are opposite conductivity types.

Abstract translation: 本发明提供了用于MOSFET噪声测试的半导体测试结构。 半导体测试结构包括：形成在半导体衬底的第一阱区上的具有第一导电类型的MOSFET器件; 形成在所述MOSFET器件上的金属屏蔽层，所述金属屏蔽层完全覆盖所述MOSFET器件并且延伸超过所述第一阱区域的圆周; 具有第二导电类型的深阱区，形成在靠近第一阱区的底表面的半导体衬底中，深阱区延伸超过第一阱区的圆周; 其中在所述金属屏蔽层的延伸超出所述第一阱区域的部分与所述深阱区域延伸超出所述第一阱区域的部分之间形成垂直通孔，以将所述金属屏蔽层耦合到所述深阱区域。 金属屏蔽层用于在测试期间连接到测试机的接地端子，并且第一导电类型和第二导电类型是相反的导电类型。