公开(公告)号：US20230114881A1

公开(公告)日：2023-04-13

申请号：US17938838

申请日：2022-10-07

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sam A. Keo ,  Arezou Khoshakhlagh ,  Alexander Soibel ,  Sarath D. Gunapala

IPC: H01L27/146

Abstract: Disclosed herein is an infrared detector. The detector includes a plurality of pixels. Each pixel includes an n-type semiconductor top contact layer, a p-type semiconductor layer electrically connected to the n-type top contact layer to form a top p-n junction, a unipolar electron barrier electrically connected to the p-type semiconductor layer, a bottom absorber, and an n-type semiconductor bottom contact layer electrically connected to the bottom absorber. The unipolar electron barrier is positioned between the p-type semiconductor layer and the bottom absorber.

公开(公告)号：US08928029B2

公开(公告)日：2015-01-06

申请号：US13712122

申请日：2012-12-12

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

IPC: H01L29/74 ,  H01L31/02 ,  H01L31/109

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

公开(公告)号：US20150145091A1

公开(公告)日：2015-05-28

申请号：US14516359

申请日：2014-10-16

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

IPC: H01L31/109 ,  H01L31/02

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

公开(公告)号：US20130146998A1

公开(公告)日：2013-06-13

申请号：US13712122

申请日：2012-12-12

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezo Khoshakhlagh

IPC: H01L31/02

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

公开(公告)号：US12300712B2

公开(公告)日：2025-05-13

申请号：US17938838

申请日：2022-10-07

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sam A. Keo ,  Arezou Khoshakhlagh ,  Alexander Soibel ,  Sarath D. Gunapala

IPC: H01L27/146

Abstract: Disclosed herein is an infrared detector. The detector includes a plurality of pixels. Each pixel includes an n-type semiconductor top contact layer, a p-type semiconductor layer electrically connected to the n-type top contact layer to form a top p-n junction, a unipolar electron barrier electrically connected to the p-type semiconductor layer, a bottom absorber, and an n-type semiconductor bottom contact layer electrically connected to the bottom absorber. The unipolar electron barrier is positioned between the p-type semiconductor layer and the bottom absorber.

公开(公告)号：US09799785B1

公开(公告)日：2017-10-24

申请号：US14998990

申请日：2016-03-14

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Alexander Soibel ,  Arezou Khoshakhlagh ,  Sarath Gunapala

IPC: H01L31/02 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/109 ,  H01L31/0304

CPC classification number: H01L31/035236 ,  H01L31/03046 ,  H01L31/109 ,  H01L31/1844

Abstract: Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.

公开(公告)号：US20190013427A1

公开(公告)日：2019-01-10

申请号：US15530294

申请日：2016-12-12

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Alexander Soibel ,  Arezou Khoshakhlagh ,  Sarath D. Gunapala

IPC: H01L31/0352 ,  H01L31/102 ,  H01L27/146

Abstract: Barrier infrared detectors having structures configured to enhance the quantum efficiency, and methods of their manufacture are provided. In particular, device structures for constructing high-performance barrier infrared detectors using novel combinations of p-type and n-type absorber regions and contact regions are provided. The infrared detectors generally incorporate a “p+Bpnn+” structure. The detectors generally comprise, in sequence, a highly p-doped contact layer “p+”, an electron unipolar barrier “B”, a p-type absorber section “p”, and n-type absorber section “n”, and a highly n-doped contact layer “n+”.

公开(公告)号：US09831372B2

公开(公告)日：2017-11-28

申请号：US15154704

申请日：2016-05-13

Applicant: California Institute of Technology

Inventor： Arezou Khoshakhlagh ,  David Z. Ting ,  Sarath D. Gunapala

IPC: H01L27/148 ,  H01L31/09 ,  H01L31/0304 ,  H01L31/0352

CPC classification number: H01L31/09 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/105

Abstract: Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

公开(公告)号：US09647164B2

公开(公告)日：2017-05-09

申请号：US14516359

申请日：2014-10-16

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

IPC: H01L31/109 ,  H01L31/02 ,  H01L31/101

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

公开(公告)号：US20160336476A1

公开(公告)日：2016-11-17

申请号：US15154704

申请日：2016-05-13

Applicant: California Institute of Technology

Inventor： Arezou Khoshakhlagh ,  David Z. Ting ,  Sarath D. Gunapala

IPC: H01L31/09 ,  H01L31/0352 ,  H01L31/0304

CPC classification number: H01L31/09 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/105

Abstract: Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

Abstract translation: 提供了配置为在长波（LW）红外区域中工作的阻挡红外探测器。 屏障红外检测器系统可以被配置为引脚，pbp，势垒和双异质结构红外检测器，其结合优化的p掺杂吸收剂，其能够利用高迁移率（电子）少数载流子。 吸收体可以是p掺杂的不含Ga的InAs / InAsSb材料。 p掺杂可以通过优化吸收材料中使用的Be掺杂水平来实现。 屏障红外检测器可以包含具有较窄周期性的单个超晶格层和Sb组分的优化以实现〜10μm的截止波长。