公开(公告)号：US08928029B2

公开(公告)日：2015-01-06

申请号：US13712122

申请日：2012-12-12

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

IPC: H01L29/74 ,  H01L31/02 ,  H01L31/109

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

公开(公告)号：US09647164B2

公开(公告)日：2017-05-09

申请号：US14516359

申请日：2014-10-16

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

IPC: H01L31/109 ,  H01L31/02 ,  H01L31/101

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

公开(公告)号：US20150145091A1

公开(公告)日：2015-05-28

申请号：US14516359

申请日：2014-10-16

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

IPC: H01L31/109 ,  H01L31/02

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

公开(公告)号：US20130146998A1

公开(公告)日：2013-06-13

申请号：US13712122

申请日：2012-12-12

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezo Khoshakhlagh

IPC: H01L31/02

CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。