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    Single-band and dual-band infrared detectors
    2.
    发明授权
    Single-band and dual-band infrared detectors 有权
    单频和双频红外探测器

    公开(公告)号：US08928029B2

    公开(公告)日：2015-01-06

    申请号：US13712122

    申请日：2012-12-12

    Applicant: California Institute of Technology

    Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

    IPC: H01L29/74 ,  H01L31/02 ,  H01L31/109

    CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

    Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

    Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

    Single-Band and Dual-Band Infrared Detectors
    3.
    发明申请
    Single-Band and Dual-Band Infrared Detectors 有权
    单频带和双频带红外探测器

    公开(公告)号：US20150145091A1

    公开(公告)日：2015-05-28

    申请号：US14516359

    申请日：2014-10-16

    Applicant: California Institute of Technology

    Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezou Khoshakhlagh

    IPC: H01L31/109 ,  H01L31/02

    CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

    Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

    Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

    SINGLE-BAND AND DUAL-BAND INFRARED DETECTORS
    4.
    发明申请
    SINGLE-BAND AND DUAL-BAND INFRARED DETECTORS 有权
    单带和双色红外探测器

    公开(公告)号：US20130146998A1

    公开(公告)日：2013-06-13

    申请号：US13712122

    申请日：2012-12-12

    Applicant: California Institute of Technology

    Inventor： David Z. Ting ,  Sarath D. Gunapala ,  Alexander Soibel ,  Jean Nguyen ,  Arezo Khoshakhlagh

    IPC: H01L31/02

    CPC classification number: H01L31/109 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/101 ,  H01L31/1013

    Abstract: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

    Abstract translation: 提供了可偏压切换的双频带红外探测器和制造这种探测器的方法。 红外检测器基于背对背异质结二极管设计，其中检测器结构依次由顶部接触层，单极性空穴阻挡层，吸收层，单极电子势垒，第二吸收体， 第二单极孔阻挡层和底部接触层。 此外，通过显着减小吸收层之一的宽度，也可以形成单频带红外检测器。

    Enhanced quantum efficiency barrier infrared detectors
    5.
    发明申请
    Enhanced quantum efficiency barrier infrared detectors 审中-公开

    公开(公告)号：US20190013427A1

    公开(公告)日：2019-01-10

    申请号：US15530294

    申请日：2016-12-12

    Applicant: California Institute of Technology

    Inventor： David Z. Ting ,  Alexander Soibel ,  Arezou Khoshakhlagh ,  Sarath D. Gunapala

    IPC: H01L31/0352 ,  H01L31/102 ,  H01L27/146

    Abstract: Barrier infrared detectors having structures configured to enhance the quantum efficiency, and methods of their manufacture are provided. In particular, device structures for constructing high-performance barrier infrared detectors using novel combinations of p-type and n-type absorber regions and contact regions are provided. The infrared detectors generally incorporate a “p+Bpnn+” structure. The detectors generally comprise, in sequence, a highly p-doped contact layer “p+”, an electron unipolar barrier “B”, a p-type absorber section “p”, and n-type absorber section “n”, and a highly n-doped contact layer “n+”.

    P-COMPENSATED AND P-DOPED SUPERLATTICE INFRARED DETECTORS
    8.
    发明申请
    P-COMPENSATED AND P-DOPED SUPERLATTICE INFRARED DETECTORS 有权
    P型和P型超级红外探测器

    公开(公告)号：US20160336476A1

    公开(公告)日：2016-11-17

    申请号：US15154704

    申请日：2016-05-13

    Applicant: California Institute of Technology

    Inventor： Arezou Khoshakhlagh ,  David Z. Ting ,  Sarath D. Gunapala

    IPC: H01L31/09 ,  H01L31/0352 ,  H01L31/0304

    CPC classification number: H01L31/09 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/105

    Abstract: Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

    Abstract translation: 提供了配置为在长波（LW）红外区域中工作的阻挡红外探测器。 屏障红外检测器系统可以被配置为引脚，pbp，势垒和双异质结构红外检测器，其结合优化的p掺杂吸收剂，其能够利用高迁移率（电子）少数载流子。 吸收体可以是p掺杂的不含Ga的InAs / InAsSb材料。 p掺杂可以通过优化吸收材料中使用的Be掺杂水平来实现。 屏障红外检测器可以包含具有较窄周期性的单个超晶格层和Sb组分的优化以实现〜10μm的截止波长。

    BARRIER INFRARED DETECTORS ON LATTICE MISMATCH SUBSTRATES
    9.
    发明申请
    BARRIER INFRARED DETECTORS ON LATTICE MISMATCH SUBSTRATES 有权
    阻挡器红外探测器在基板上的错配基板

    公开(公告)号：US20140225064A1

    公开(公告)日：2014-08-14

    申请号：US14178133

    申请日：2014-02-11

    Applicant: California Institute of Technology

    Inventor： Arezou Khoshakhlagh ,  David Z. Ting ,  Sarath D. Gunapala ,  Cory J. Hill

    IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0304

    CPC classification number: H01L31/035236 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544

    Abstract: Systems and methods of implementing barrier infrared detectors on lattice mismatched substrates are provided. The barrier infrared detector systems combine an active detector structure (e.g., contact/barrier/absorber pairs) with a non-lattice matched substrate through a multi-layered transitional structure that forms a virtual substrate that can be strain balanced with the detector structure. The transitional metamorphic layer may include one or both of at least one graded metamorphic buffer layer or interfacial misfit array (IMF). A further interfacial layer may be interposed within the transitional structure, in some embodiments this interfacial layer includes at least one layer of AlSb.

    Abstract translation: 提供了在晶格失配衬底上实施屏障红外探测器的系统和方法。 屏障红外探测器系统通过形成可与检测器结构应变平衡的虚拟衬底的多层过渡结构将活性检测器结构（例如，接触/阻挡/吸收体对）与非晶格匹配衬底组合。 过渡变质层可以包括至少一个梯度变质缓冲层或界面失配阵列（IMF）中的一个或两个。 在过渡结构中可以插入另外的界面层，在一些实施例中，该界面层包括至少一层AlSb。

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