公开(公告)号：US08765333B2

公开(公告)日：2014-07-01

申请号：US13561103

申请日：2012-07-30

Applicant: Cheng-Hung Yu

Inventor： Cheng-Hung Yu

IPC: G02B5/20 ,  G03F7/20

CPC classification number: G02B5/201 ,  G03F7/0007

Abstract: A method for manufacturing a color filter array having hybrid color filters includes providing a high-grade photoresist and a low-grade photoresist, forming a plurality of first color filters on a substrate, and forming a plurality of second color filters and a plurality of third color filters on the substrate. The first color filters include the high-grade photoresist, and the second color filters and the third color filters include the low-grade photoresist. The high-grade photoresist of the first color filters includes a first amount of large size pigments in one unit area and the low-grade photoresists of the second color filters and the third color filters include a second amount of large size pigments in one unit area. A ratio of the second amount to the first amount is equal to or larger than 1.

Abstract translation: 一种制造具有混合滤色器的滤色器阵列的方法，包括提供高级光致抗蚀剂和低等级光致抗蚀剂，在衬底上形成多个第一滤色器，以及形成多个第二滤色器和多个第三滤色器 基底上的滤色器。 第一滤色器包括高级光致抗蚀剂，第二滤色器和第三滤色器包括低等级光致抗蚀剂。 第一滤色器的高级光致抗蚀剂包括在一个单位面积中的第一量的大尺寸颜料和第二滤色器的低等级光致抗蚀剂和第三滤色器在一个单位面积中包括第二量的大尺寸颜料 。 第二量与第一量的比例等于或大于1。

公开(公告)号：US20110253435A1

公开(公告)日：2011-10-20

申请号：US13166133

申请日：2011-06-22

Applicant: Han-Pei Huang ,  Cheng-Hung Yu

Inventor： Han-Pei Huang ,  Cheng-Hung Yu

IPC: H05K1/03 ,  H05K1/11

CPC classification number: H05K3/4644 ,  B33Y10/00 ,  B33Y80/00 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/06 ,  H05K3/185 ,  H05K3/205 ,  H05K3/386 ,  H05K2201/0236 ,  H05K2201/09118 ,  H05K2203/0108 ,  H05K2203/013 ,  H05K2203/107 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: A multilayer three-dimensional circuit structure and a manufacturing method thereof are provided in the present invention. The manufacturing method includes following steps. First, a three-dimensional insulating structure is provided. A first three-dimensional circuit structure is then formed on a surface of the three-dimensional insulating structure. Next, an insulating layer covering the first three-dimensional circuit structure is formed. Thereafter, a second three-dimensional circuit structure is formed on the insulating layer. Subsequently, at least a conductive via penetrating the insulating layer is formed for electrically connecting the second three-dimensional circuit structure and the first three-dimensional circuit structure.

Abstract translation: 本发明提供了一种多层三维电路结构及其制造方法。 制造方法包括以下步骤。 首先，提供三维绝缘结构。 然后在三维绝缘结构的表面上形成第一三维电路结构。 接下来，形成覆盖第一三维电路结构的绝缘层。 此后，在绝缘层上形成第二三维电路结构。 随后，至少形成了穿过绝缘层的导电通孔，用于电连接第二三维电路结构和第一三维电路结构。

公开(公告)号：US20110212567A1

公开(公告)日：2011-09-01

申请号：US12714093

申请日：2010-02-26

Applicant: Hsin-Ting TSAI ,  Cheng-Hung Yu ,  Chin-Kuang Liu ,  Kun-Yen Hsu

Inventor： Hsin-Ting TSAI ,  Cheng-Hung Yu ,  Chin-Kuang Liu ,  Kun-Yen Hsu

IPC: H01L31/0232 ,  H01L31/18 ,  H01L27/14

CPC classification number: H01L27/14687 ,  H01L27/14636 ,  H01L27/14685

Abstract: A method of fabricating an image sensor device is provided. First, a substrate comprising a pixel array region and a pad region is provided. A patterned metal layer and a first planarization layer having an opening exposing the patterned metal layer in the pad region are sequentially formed on the substrate. A color filter array is formed on the first planarization layer in the pixel array region. A second planarization layer is formed to cover the color filter array and filled into the opening. A plurality of microlens is formed above the color filter array on the second planarization layer. A capping layer is conformally formed on the microlens and the second planarization layer. An etching step is performed to remove the capping layer and the second planarization layer in the opening so as to expose the patterned metal layer in the pad region.

Abstract translation: 提供一种制造图像传感器装置的方法。 首先，提供包括像素阵列区域和衬垫区域的衬底。 图案化金属层和具有露出焊盘区域中的图案化金属层的开口的第一平坦化层依次形成在基板上。 在像素阵列区域中的第一平坦化层上形成滤色器阵列。 形成第二平坦化层以覆盖滤色器阵列并填充到开口中。 在第二平坦化层上的滤色器阵列上方形成多个微透镜。 覆盖层保形地形成在微透镜和第二平坦化层上。 执行蚀刻步骤以去除开口中的覆盖层和第二平坦化层，以暴露焊盘区域中的图案化金属层。

公开(公告)号：US08003983B2

公开(公告)日：2011-08-23

申请号：US11379229

申请日：2006-04-19

Applicant: Cheng-Hung Yu

Inventor： Cheng-Hung Yu

IPC: H01L23/544

CPC classification number: H01L27/14627

Abstract: A wafer for manufacturing image sensors is disclosed. The wafer includes an image sensor and a test key. The image sensor includes a plurality of micro-lenses; the test key includes a plurality of micro-lens samples for defects inspection. The arrangement of the micro-lens samples on the test key is substantially different from the arrangement of the micro-lenses on the image sensor. The arrangement of the micro-lens samples on the test key allows defects inspection to become less complicated.

Abstract translation: 公开了一种用于制造图像传感器的晶片。 晶片包括图像传感器和测试键。 图像传感器包括多个微透镜; 测试键包括用于缺陷检查的多个微透镜样本。 微透镜样品在测试键上的布置与图像传感器上的微透镜的布置显着不同。 微透镜样品在测试键上的布置使得缺陷检查变得不那么复杂。

公开(公告)号：US07987589B2

公开(公告)日：2011-08-02

申请号：US12333014

申请日：2008-12-11

Applicant: Han-Pei Huang ,  Cheng-Hung Yu

Inventor： Han-Pei Huang ,  Cheng-Hung Yu

IPC: H05K3/02

CPC classification number: H05K3/4644 ,  B33Y10/00 ,  B33Y80/00 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/06 ,  H05K3/185 ,  H05K3/205 ,  H05K3/386 ,  H05K2201/0236 ,  H05K2201/09118 ,  H05K2203/0108 ,  H05K2203/013 ,  H05K2203/107 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: A multilayer three-dimensional circuit structure and a manufacturing method thereof are provided in the present invention. The manufacturing method includes following steps. First, a three-dimensional insulating structure is provided. A first three-dimensional circuit structure is then formed on a surface of the three-dimensional insulating structure. Next, an insulating layer covering the first three-dimensional circuit structure is formed. Thereafter, a second three-dimensional circuit structure is formed on the insulating layer. Subsequently, at least a conductive via penetrating the insulating layer is formed for electrically connecting the second three-dimensional circuit structure and the first three-dimensional circuit structure.

Abstract translation: 本发明提供了一种多层三维电路结构及其制造方法。 制造方法包括以下步骤。 首先，提供三维绝缘结构。 然后在三维绝缘结构的表面上形成第一三维电路结构。 接下来，形成覆盖第一三维电路结构的绝缘层。 此后，在绝缘层上形成第二三维电路结构。 随后，至少形成了穿过绝缘层的导电通孔，用于电连接第二三维电路结构和第一三维电路结构。

公开(公告)号：US20110023297A1

公开(公告)日：2011-02-03

申请号：US12902518

申请日：2010-10-12

Applicant: Ming-Huan Yang ,  Chung-Wei Wang ,  Chia-Chi Wu ,  Chao-Kai Cheng ,  Tzyy-Jang Tseng ,  Chang-Ming Lee ,  Cheng-Po Yu ,  Cheng-Hung Yu

Inventor： Ming-Huan Yang ,  Chung-Wei Wang ,  Chia-Chi Wu ,  Chao-Kai Cheng ,  Tzyy-Jang Tseng ,  Chang-Ming Lee ,  Cheng-Po Yu ,  Cheng-Hung Yu

IPC: H05K3/10

CPC classification number: H05K3/182 ,  H05K3/389 ,  H05K3/421 ,  H05K3/422 ,  H05K3/426 ,  H05K3/4661 ,  H05K2203/013 ,  H05K2203/0565 ,  H05K2203/0709 ,  Y10T29/49155

Abstract: A method for fabricating a double-sided or multi-layer printed circuit board (PCB) by ink jet printing that includes providing a substrate, forming a first self-assembly membrane (SAM) on at least one side of the substrate, forming a non-adhesive membrane on the first SAM, forming at least one microhole in the substrate, forming a second SAM on a surface of the microhole, providing catalyst particles on the at least one side of the substrate and on the surface of the microhole, and forming a catalyst circuit pattern on the substrate.

Abstract translation: 一种通过喷墨印刷制造双面或多层印刷电路板（PCB）的方法，其包括提供基板，在所述基板的至少一侧上形成第一自组装膜（SAM），形成非 - 在第一SAM上形成粘合膜，在基底中形成至少一个微孔，在微孔的表面上形成第二SAM，在基底的至少一侧和微孔的表面上形成催化剂颗粒，并形成 基板上的催化剂电路图案。

公开(公告)号：US20060176326A1

公开(公告)日：2006-08-10

申请号：US11054671

申请日：2005-02-09

Applicant: Chung-Cheng Chou ,  Tsung-Ping Hsu ,  Weng-Chen Liu ,  Cheng-Hung Yu ,  Shang-Shi Wu

Inventor： Chung-Cheng Chou ,  Tsung-Ping Hsu ,  Weng-Chen Liu ,  Cheng-Hung Yu ,  Shang-Shi Wu

IPC: B41J29/38

CPC classification number: B41J2/04588 ,  B41J2/04563 ,  B41J2/04565 ,  B41J2/0458

Abstract: A fluid injector device with a plurality of heaters for bubble generation is provided. The resistance of each heater is measured and compared with a standard operating resistance. Output signal is adjusted to heaters with resistance exceeding the standard operating resistance.

Abstract translation: 提供了具有用于产生气泡的多个加热器的流体注射器装置。 测量每个加热器的电阻，并将其与标准工作电阻进行比较。 输出信号被调整到具有超过标准工作电阻的电​​阻的加热器。

公开(公告)号：US06936386B2

公开(公告)日：2005-08-30

申请号：US10605677

申请日：2003-10-17

Applicant: Cheng-Hung Yu

Inventor： Cheng-Hung Yu

IPC: G01B11/00 ,  G03C5/00 ,  G03F7/00 ,  G03F9/00 ,  H01L21/00 ,  H01L21/027

CPC classification number: G03F9/7011 ,  G03F9/7019 ,  G03F9/7088

Abstract: A semiconductor wafer has at least one pre-layer on-wafer alignment mark (pre-layer on-wafer AM) on a top surface of the semiconductor wafer. A baseline check (BCHK) is performed to align a current-layer reticle AM on a current-layer reticle with the pre-layer on-wafer AM. By capturing and comparing signals of the current-layer reticle AM and the pre-layer on-wafer AM, a corresponding coordinate of the current-layer reticle to the semiconductor wafer is calibrated. Finally, a lithography process is performed to transfer the layout of the current-layer reticle AM to the top surface of the semiconductor wafer to form a corresponding current-layer on-wafer AM.

Abstract translation: 半导体晶片在半导体晶片的顶表面上具有至少一个晶片上对准标记（晶片上的预层）。 执行基线检查（BCHK）以将当前层掩模版上的当前层标线AM与晶片上的AM前层对准。 通过捕获和比较当前层标线AM和晶片AM上的晶片AM的信号，校准当前层掩模版对半导体晶片的对应坐标。 最后，进行光刻处理以将当前层标线AM的布局转移到半导体晶片的顶表面以形成相应的晶片上的电流层AM。

公开(公告)号：US08707974B2

公开(公告)日：2014-04-29

申请号：US12635710

申请日：2009-12-11

Applicant: Hsin-Ting Tsai ,  Cheng-Hung Yu ,  Chin-Kuang Liu ,  Ming-Hsin Lee ,  Wei-Hong Chuang ,  Kuei-Chang Tung ,  Yan-Yi Lu ,  Chin-Chin Wang

Inventor： Hsin-Ting Tsai ,  Cheng-Hung Yu ,  Chin-Kuang Liu ,  Ming-Hsin Lee ,  Wei-Hong Chuang ,  Kuei-Chang Tung ,  Yan-Yi Lu ,  Chin-Chin Wang

IPC: B08B3/02

CPC classification number: B08B3/04 ,  B08B3/02 ,  H01L21/67051 ,  H01L21/6708

Abstract: A wafer cleaning device comprising a wafer stage for holding a wafer having a surface to be washed, a first nozzle positioned above the wafer, a second nozzle positioned above the wafer. A first height is between the first nozzle and the surface and a second height is between the second nozzle and the surface, wherein the first height is shorter than the second height.

Abstract translation: 一种晶片清洗装置，包括用于保持具有待清洗表面的晶片的晶片台，位于晶片上方的第一喷嘴，位于晶片上方的第二喷嘴。 第一高度在第一喷嘴和表面之间，第二高度在第二喷嘴和表面之间，其中第一高度比第二高度短。

公开(公告)号：US08314469B2

公开(公告)日：2012-11-20

申请号：US12553987

申请日：2009-09-04

Applicant: Cheng-Hung Yu

Inventor： Cheng-Hung Yu

IPC: H01L31/0232

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627

Abstract: An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.

Abstract translation: 图像传感器结构和图像传感器结构的制造方法，用于避免或减轻镜片遮蔽效应。 图像传感器结构包括基板，设置在基板表面的传感器阵列，覆盖传感器阵列的电介质层，其中电介质层包括具有凹陷结构的顶表面，填充到凹陷结构中的下层，并具有 折射率大于介电层的折射率，设置在与传感器阵列对应的下层上的滤光片阵列，以及设置在滤光片阵列上方的微透镜阵列。 可以另外设置顶层以覆盖过滤器阵列，并且微透镜阵列设置在顶层上。