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公开(公告)号:US10017387B2
公开(公告)日:2018-07-10
申请号:US15117878
申请日:2015-02-09
Inventor: Fumihiro Kurokawa , Seitaro Kobayashi , Takashi Kawasaki , Go Takeda , Yoshio Bando , Dmitri Golberg
IPC: C01B21/064
CPC classification number: C01B21/0646 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/80
Abstract: A boron nitride fine particle has low major diameter/thickness (aspect) ratio, high purity and high crystallinity, and also has an average particle diameter of 0.05 to 2.0 μm, a graphitization index of 3 or less, and a total oxygen content of 0.20% by mass or less, with an average value of a major diameter/thickness ratio of scaly particles being 6.0 or less. A method of producing a boron nitride fine particle includes introducing ammonia and an alkoxide borate at an ammonia/alkoxide borate molar ratio of 1 to 5 in a reaction vessel in an inert gas atmosphere for heating at 800 to 1,350° C. within 30 seconds thereby obtaining a boron nitride precursor, and then heating the boron nitride precursor at 1,650 to 2,200° C. for at least 0.5 hour in an inert gas atmosphere.
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公开(公告)号:US12187608B2
公开(公告)日:2025-01-07
申请号:US16755715
申请日:2018-08-17
Applicant: DENKA COMPANY LIMITED
Inventor: Go Takeda , Michiharu Nakashima , Yoshitaka Taniguchi
IPC: C01B21/064
Abstract: To provide a boron nitride powder having excellent heat conductivity and high particle strength. Provided is a boron nitride powder which comprises bulky boron nitride formed such that scaly primary particles of hexagonal boron nitride are aggregated to form bulky particles, and which has the following characteristics (A) to (C): (A) a particle strength of the bulky particles at a cumulative breakdown rate of 63.2% is 5.0 MPa or more; (B) an average particle size of the boron nitride powder is 2 μm or more and 20 μm or less; and (C) an orientation index of the boron nitride powder as determined from X-ray diffraction is 20 or less.
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公开(公告)号:US10752503B2
公开(公告)日:2020-08-25
申请号:US16343574
申请日:2017-08-31
Applicant: DENKA COMPANY LIMITED
Inventor: Go Takeda , Yoshitaka Taniguchi , Takemi Oguma
IPC: C01B21/064 , C08K3/38 , C08K9/04 , C08L101/00 , C08K3/013
Abstract: The present invention provides a spherical boron nitride fine powder and the other superior in filling property into resin. The present invention relates to a spherical boron nitride fine powder having the following characteristics (A) to (C): (A) the spherical boron nitride fine particles have any one or more of Si, Ti, Zr, Ce, Al, Mg, Ge, Ga, and V in an amount of 0.1 atm % or more and 3.0 atm % or less in its composition on the surface of 10 nm; (B) the spherical boron nitride fine powder has an average particle diameter of 0.05 μm or more and 1 μm or less; and (C) the spherical boron nitride fine powder has an average circularity of 0.8 or more.
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公开(公告)号:US11732173B2
公开(公告)日:2023-08-22
申请号:US17588757
申请日:2022-01-31
Applicant: DENKA COMPANY LIMITED
Inventor: Go Takeda , Yoshitaka Taniguchi
IPC: C08K5/14 , C09K5/14 , C01B21/064 , C08K3/38 , C08K9/02 , C08K9/04 , C09C3/00 , C09C3/04 , C09C3/06 , C09C3/08
CPC classification number: C09K5/14 , C01B21/0645 , C01B21/0648 , C08K3/38 , C08K9/02 , C08K9/04 , C09C3/006 , C09C3/041 , C09C3/066 , C09C3/08 , C01P2002/76 , C01P2004/03 , C01P2004/50 , C01P2004/61 , C01P2004/80 , C01P2006/32 , C08K2003/385 , C08K2201/001 , C08K2201/004 , C08K2201/005
Abstract: A surface-treated aggregated boron nitride powder is prepared by using the boron nitride powder as the raw material, adding an oxidizer to the boron nitride aggregated grains, wet-pulverizing or wet-crushing the grains for surface modification treatment of the particles and allowing reaction of the particles with a metal coupling agent. The surface-treated boron nitride aggregated grains are formed by aggregation of hexagonal h-BN primary particles; (B) have any one or more of Si, Ti, Zr, Ce, Al, Mg, Ge, Ga, and V in an amount of 0.1 atm % or more and 3.0 atm % or less in its composition on the surface of 10 nm; (C) have a crushing strength of 5 MPa or more; and (D) have an average particle diameter of 20 μm or more and 100 μm or less.
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公开(公告)号:US11268004B2
公开(公告)日:2022-03-08
申请号:US16339978
申请日:2017-08-31
Applicant: DENKA COMPANY LIMITED
Inventor: Go Takeda , Yoshitaka Taniguchi
IPC: C08K3/38 , C08K9/02 , C09K5/14 , C01B21/064 , C08K9/04 , C09C3/00 , C09C3/04 , C09C3/06 , C09C3/08
Abstract: A boron nitride powder includes boron nitride aggregated grains that are formed by aggregation of scaly hexagonal boron nitride primary particles, the boron nitride powder having the following characteristic properties (A) to (C): (A) the primary particles of the scaly hexagonal boron nitride have an average long side length of 1.5 μm or more and 3.5 μm or less and a standard deviation of 1.2 μm or less; (B) the boron nitride aggregated grains have a grain strength of 8.0 MPa or more at a cumulative breakdown rate of 63.2% and a grain strength of 4.5 MPa or more at a cumulative breakdown rate of 20.0%; and (C) the boron nitride powder has an average particle diameter of 20 μm or more and 100 μm or less. Also provided are a method for producing the same and a thermally conductive resin composition including the same.
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公开(公告)号:US10017386B2
公开(公告)日:2018-07-10
申请号:US15117853
申请日:2015-02-09
Inventor: Fumihiro Kurokawa , Seitaro Kobayashi , Takashi Kawasaki , Go Takeda , Yoshio Bando , Dmitri Golberg
IPC: C01B21/064
CPC classification number: C01B21/0646 , C01P2004/03 , C01P2004/04 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2006/80
Abstract: A spherical boron nitride fine particle suited for use as a highly thermoconductive filler or the like has an average particle diameter of 0.01 to 1.0 μm, an orientation index of 1 to 15, a boron nitride purity of 98.0% by mass or greater, and an average circularity of 0.80 or greater. A method of producing a spherical boron nitride fine particle includes reacting ammonia with an alkoxide borate at an ammonia/alkoxide borate molar ratio of 1 to 10 in an inert gas stream at 750° C. or higher within 30 seconds, then applying heat treatment to a reaction product in an atmosphere of ammonia gas or a mixed gas of ammonia gas and an inert gas at 1,000 to 1,600° C. for at least 1 hour, and further firing the reaction product in an inert gas atmosphere at 1,800 to 2,200° C. for at least 0.5 hour.
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