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公开(公告)号：US20210193427A1
公开(公告)日：2021-06-24
申请号：US17177944
申请日：2021-02-17
Applicant: DENKA COMPANY LIMITED
Inventor： Toshiyuki Morishita , Hiromitsu Chatani , Shimpei Hirokawa , Toshiyuki Ibayashi , Isao Sugimoto
Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.
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公开(公告)号：US11915921B2
公开(公告)日：2024-02-27
申请号：US17996469
申请日：2021-04-14
Applicant: Denka Company Limited
Inventor： Dai Tsukada , Hiromitsu Chatani , Daisuke Ishikawa
IPC: H01J9/04 , H01J1/16 , H01J37/063
CPC classification number: H01J9/042 , H01J1/16 , H01J37/063
Abstract: An electron source according to the present disclosure includes a columnar portion made of a first material having an electron emission characteristic; and a tubular portion that is disposed to surround the columnar portion and made of a second material having a higher work function than the first material, wherein a hole that extends in a direction from one end face toward the other end face and has a substantially circular cross-sectional shape is formed in the tubular portion, and the columnar portion has a substantially triangular or substantially quadrangular cross-sectional shape and is fixed to the tubular portion in an abutting engagement with an inner surface of the hole.
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公开(公告)号：US11152185B2
公开(公告)日：2021-10-19
申请号：US17177944
申请日：2021-02-17
Applicant: DENKA COMPANY LIMITED
Inventor： Toshiyuki Morishita , Hiromitsu Chatani , Shimpei Hirokawa , Toshiyuki Ibayashi , Isao Sugimoto
Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.
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Patent Agency Ranking
公开(公告)号：US12014894B2
公开(公告)日：2024-06-18
申请号：US18258461
申请日：2021-12-20
Applicant: Denka Company Limited
Inventor： Hiromitsu Chatani
IPC: H01J1/146 , H01J1/16 , H01J37/065
CPC classification number: H01J1/146 , H01J1/16 , H01J37/065 , H01J2237/06308
Abstract: A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 μm.
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公开(公告)号：US11984291B2
公开(公告)日：2024-05-14
申请号：US18258461
申请日：2021-12-20
Applicant: Denka Company Limited
Inventor： Hiromitsu Chatani
IPC: H01J1/146 , H01J1/16 , H01J37/065
CPC classification number: H01J1/146 , H01J1/16 , H01J37/065 , H01J2237/06308
Abstract: A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 μm.
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公开(公告)号：US12293893B2
公开(公告)日：2025-05-06
申请号：US18294251
申请日：2022-06-23
Inventor： Hiromitsu Chatani , Daisuke Ishikawa , Jie Tang , Tadakatsu Ohkubo , Shuai Tang , Jun Uzuhashi , Kazuhiro Hono
Abstract: A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.
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公开(公告)号：US10957511B2
公开(公告)日：2021-03-23
申请号：US16707877
申请日：2019-12-09
Applicant: DENKA COMPANY LIMITED
Inventor： Toshiyuki Morishita , Hiromitsu Chatani , Shimpei Hirokawa , Toshiyuki Ibayashi , Isao Sugimoto
Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.
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公开(公告)号：US10553390B2
公开(公告)日：2020-02-04
申请号：US16317640
申请日：2017-06-29
Applicant: DENKA COMPANY LIMITED
Inventor： Toshiyuki Morishita , Hiromitsu Chatani , Shimpei Hirokawa , Toshiyuki Ibayashi , Isao Sugimoto
Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.
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