Abstract:
A light-emitting diode device has a first carrier and at least one light-emitting diode chip, which is arranged on the first carrier. The first carrier has at least one first and one second carrier part, wherein the light-emitting diode chip rests only on the first carrier part. Furthermore, the first and second carrier parts each have a thermal conductivity. The thermal conductivity of the first carrier part is at least 1.5 times the thermal conductivity of the second carrier part. The first carrier part is surrounded laterally by the second carrier part.
Abstract:
A light-emitting diode device has a first carrier and at least one light-emitting diode chip, which is arranged on the first carrier. The first carrier has at least one first and one second carrier part, wherein the light-emitting diode chip rests only on the first carrier part. Furthermore, the first and second carrier parts each have a thermal conductivity. The thermal conductivity of the first carrier part is at least 1.5 times the thermal conductivity of the second carrier part. The first carrier part is surrounded laterally by the second carrier part.
Abstract:
A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip, arranged on the carrier, and an electrical component arranged at least partly recessed in the at least one cavity. Furthermore, the light-emitting diode device includes an ESD protection element, which is formed by a partial region of the carrier.
Abstract:
A mechanically stable main body having a cutout, into which an ESD protection element is at least partly embedded and mechanically fixed by means of a connection means. Electrical terminals of the protection element are connected to terminal pads on the top side of the main body by way of a structured metallic layer bearing on main body and protection element.
Abstract:
A chip and a method for manufacturing a chip are disclosed. In an embodiment, the chip includes a varistor layer composed of zinc oxide, a multilayered electrode structure which realizes a varistor function in the varistor layer and at least two solderable or bondable external contacts on a first main surface of the varistor layer. The chip further includes a glass layer disposed on the first main surface leaving only the external contacts uncovered, wherein the glass layer includes, as main constituents, oxides of Si and/or Ge, B and K, which in total have at least 70% by weight of the constituents of the glass layer, and wherein the glass layer is substantially free of Al, Ga, Cr and Ti.
Abstract:
A method for producing a multilayer substrate (1) is specified, wherein a main body (26) comprising a plurality of ceramic layers (2) is provided, wherein at least one layer (2) comprises a hole (27). In order to form a plated-through hole (4, 18, 20, 21), the hole (27) is filled with a metal by depositing the metal from a solution. Furthermore, a multilayer substrate is specified wherein a plated-through hole (4, 18, 20, 21) in the interior of the main body (26) is connected to a further contact (11), wherein the plated-through hole (4, 18, 20, 21) comprises a different material than the further contact (11) and/or is produced by a different method.macros hash =multilayer substrate star =plated-throuch hole pie =connection contact alpha =photoresist mask beta =further contact gamma =HTCC technology delta =main body matt =ceramic layer
Abstract:
A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip arranged on the carrier, and an electrical component arranged at least partly recessed in the at least one cavity. Furthermore, the light-emitting diode device includes an ESD protection element, which is formed by a partial region of the carrier.
Abstract:
A component assembly and a method for manufacturing a component assembly are disclosed. In some embodiments a component assembly includes a carrier, a metallic structure arranged on the carrier, wherein the metallic structure comprises at least one cavity and an electrical component arranged at least in part in the cavity.
Abstract:
A method for producing an electric contact-connection of a multilayer component is specified. A main body has internal electrode layers, a insulating material, an electrically conductive material and a photosensitive material are provided. The insulating material and the electrically conductive material are arranged in a structured manner on an outer side of the multilayer component for the alternate contact-connection of the internal electrode layers. The structured arrangement is produced by the photosensitive material. A multilayer component comprising such a contact-connection is furthermore specified.
Abstract:
A mechanically stable main body having a cutout, into which an ESD protection element is at least partly embedded and mechanically fixed by means of a connection means. Electrical terminals of the protection element are connected to terminal pads on the top side of the main body by way of a structured metallic layer bearing on main body and protection element.