-
公开(公告)号：US08987752B2
公开(公告)日：2015-03-24
申请号：US13896570
申请日：2013-05-17
Applicant: Epistar Corporation
Inventor： Cheng Hsiang Ho , Biau-Dar Chen , Liang Sheng Chi , Chun Chang Chen , Pei Shan Fang
CPC classification number: H01L33/0095 , B23K26/0006 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L33/20 , H01L33/26 , H01L33/44 , H01L33/64 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0075 , H01L2924/00014
Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate, wherein the supporting layer is formed before forming the plurality of first modified regions; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of first modified regions.
Abstract translation: 一种制造光电子器件的方法，包括：提供衬底，其中所述衬底包括与所述第一主表面相对的第一主表面和第二主表面; 在所述基板的所述第二主表面上形成发光堆叠; 形成覆盖所述发光层的支撑层; 通过在基板中采用第一能量在基板中形成多个第一改质区域，其中在形成多个第一改质区域之前形成支撑层; 在所述基板的所述第一主表面上形成氧化物层; 以及沿着所述多个第一修改区域切割所述基板。
-
公开(公告)号：US09224912B2
公开(公告)日：2015-12-29
申请号：US14631054
申请日：2015-02-25
Applicant: EPISTAR CORPORATION
Inventor： Cheng Hsiang Ho , Biau-Dar Chen , Liang Sheng Chi , Chun Chang Chen , Pei Shan Fang
CPC classification number: H01L33/0095 , B23K26/0006 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L33/20 , H01L33/26 , H01L33/44 , H01L33/64 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0075 , H01L2924/00014
Abstract: A method of fabricating an optoelectronic device, comprises: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.
Abstract translation: 一种制造光电子器件的方法，包括：提供衬底，其中所述衬底包括与所述第一主表面相对的第一主表面和第二主表面; 在所述基板的所述第二主表面上形成发光堆叠; 形成覆盖所述发光层的支撑层; 在形成支撑层之后，通过在衬底中采用第一能量，在衬底中形成多个第一改质区域; 并切割基板。
-
公开(公告)号：US10199542B2
公开(公告)日：2019-02-05
申请号：US15332711
申请日：2016-10-24
Applicant: EPISTAR CORPORATION
Inventor： Chien-Hua Chou , Tai-Chun Wang , Chih-Tsung Su , Biau-Dar Chen
IPC: H01L29/88 , H01L29/861 , H01L33/38 , H01L33/14
Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.
-
Patent Agency Ranking
公开(公告)号：US20130306993A1
公开(公告)日：2013-11-21
申请号：US13896570
申请日：2013-05-17
Applicant: Epistar corporation
Inventor： Cheng Hsiang Ho , Biau-Dar Chen , Liang Sheng Chi , Chun Chang Chen , Pei Shan Fang
IPC: H01L33/26
CPC classification number: H01L33/0095 , B23K26/0006 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L33/20 , H01L33/26 , H01L33/44 , H01L33/64 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0075 , H01L2924/00014
Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions.
Abstract translation: 一种制造光电子器件的方法，包括：提供衬底，其中所述衬底包括与所述第一主表面相对的第一主表面和第二主表面; 在所述基板的所述第二主表面上形成发光堆叠; 形成覆盖所述发光层的支撑层; 通过在衬底中采用第一能量在衬底中形成多个第一修饰区域; 在所述基板的所述第一主表面上形成氧化物层; 以及沿着所述多个所述第一修改区域切割所述基板。
-
公开(公告)号：US11742459B2
公开(公告)日：2023-08-29
申请号：US17879526
申请日：2022-08-02
Applicant: EPISTAR CORPORATION
Inventor： Chien-Hua Chou , Tai-Chun Wang , Chih-Tsung Su , Biau-Dar Chen
CPC classification number: H01L33/38 , H01L33/145
Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.
-
公开(公告)号：US11430916B2
公开(公告)日：2022-08-30
申请号：US17087310
申请日：2020-11-02
Applicant: EPISTAR CORPORATION
Inventor： Chien-Hua Chou , Tai-Chun Wang , Chih-Tsung Su , Biau-Dar Chen
Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.
-
公开(公告)号：US10825956B2
公开(公告)日：2020-11-03
申请号：US16670726
申请日：2019-10-31
Applicant: EPISTAR CORPORATION
Inventor： Chien-Hua Chou , Tai-Chun Wang , Chih-Tsung Su , Biau-Dar Chen
Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.
-
公开(公告)号：US09530934B1
公开(公告)日：2016-12-27
申请号：US14977686
申请日：2015-12-22
Applicant: EPISTAR CORPORATION
Inventor： Chien-Hua Chou , Tai-Chun Wang , Biau-Dar Chen , Chih-Tsung Su
IPC: H01L29/88 , H01L29/861 , H01L33/38 , H01L33/14
CPC classification number: H01L33/38 , H01L33/145
Abstract: A light-emitting device includes a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode includes a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion includes a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.
Abstract translation: 发光器件包括半导体叠层; 包括设置在所述半导体堆叠上的外围的焊盘电极; 以及连接到所述焊盘电极的指状电极，其中所述指状电极包括从所述焊盘电极的周边延伸的第一部分和远离所述焊盘电极的第二部分，所述第一部分包括第一侧和第二侧，所述第一部分 一侧与第二侧相反，第一侧包括具有第一曲率半径的第一弧形，第一曲率半径大于10μm。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.011 seconds)
