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公开(公告)号：US10374125B2
公开(公告)日：2019-08-06
申请号：US16049337
申请日：2018-07-30
Applicant: EPISTAR CORPORATION
Inventor： Ta-Cheng Hsu , Ching-Shian Yeh , Chao-Shun Huang , Ying-Yong Su , Ya-Lan Yang , Ya-Ju Lee
Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.
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公开(公告)号：US11335826B2
公开(公告)日：2022-05-17
申请号：US16917223
申请日：2020-06-30
Applicant: EPISTAR CORPORATION
Inventor： Chu-Jih Su , Chao-Shun Huang , Shiuan-Leh Lin , Shih-Chang Lee , Wen-Luh Liao , Mei-Chun Liu
IPC: H01L31/055 , H01L25/16 , H01L31/0224 , H01L31/0304 , H01L31/12 , H01L31/101
Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.
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3.发明申请公开(公告)号：US20160118538A1
公开(公告)日：2016-04-28
申请号：US14986791
申请日：2016-01-04
Applicant: EPISTAR CORPORATION
Inventor： Ta-Cheng HSU , Ya-Lan Yan , Ying-Yong SU , Ching-Shian YEH , Chao-Shun Huang , Ya-Ju Lee
CPC classification number: H01L33/22 , H01L33/007 , H01L33/32
Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.
Abstract translation: 发光装置包括包含多个纹理结构的纹理化衬底，其中纹理结构和纹理化衬底都由蓝宝石构成; 以及覆盖所述纹理化衬底的发光堆叠，包括第一导电类型半导体层，有源层和第二导电类型半导体层，其中所述多个纹理结构中的每一个包括具有第一顶视形状的顶部 以及平行于顶部并具有第二顶视图形状的底部部分，其中第一顶视图形状包括圆形或椭圆形，第一顶视图形状包括第一周边和第二顶视图形状 包括第二周边，第一周边由第二周边包围，并且在第一周边和第二周边之间各个距离。
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公开(公告)号：US11935981B2
公开(公告)日：2024-03-19
申请号：US17364175
申请日：2021-06-30
Applicant: EPISTAR CORPORATION
Inventor： Chu-Jih Su , Chia-Hsiang Chou , Wei-Chih Peng , Wen-Luh Liao , Chao-Shun Huang , Hsuan-Le Lin , Shih-Chang Lee , Mei Chun Liu , Chen Ou
IPC: H01L31/055 , H01L25/16 , H01L31/0224 , H01L31/0304 , H01L31/101 , H01L31/12
CPC classification number: H01L31/055 , H01L25/167 , H01L31/022408 , H01L31/03046 , H01L31/101 , H01L31/125
Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.
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公开(公告)号：US20210408310A1
公开(公告)日：2021-12-30
申请号：US16917223
申请日：2020-06-30
Applicant: EPISTAR CORPORATION
Inventor： Chu-Jih Su , Chao-Shun Huang , Shiuan-Leh Lin , Shih-Chang Lee , Wen-Luh Liao , Mei-Chun Liu
IPC: H01L31/055 , H01L31/0304 , H01L31/0224 , H01L25/16
Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.
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Patent Agency Ranking
公开(公告)号：US10038116B2
公开(公告)日：2018-07-31
申请号：US15691357
申请日：2017-08-30
Applicant: EPISTAR CORPORATION
Inventor： Ta-Cheng Hsu , Ching-Shian Yeh , Chao-Shun Huang , Ying-Yong Su , Ya-Lan Yang , Ya-Ju Lee
CPC classification number: H01L33/22 , H01L33/007 , H01L33/32
Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein one of the plurality of textured structures comprises a top portion and a bottom portion, wherein a first distance between a first projection of the top portion on the bottom portion and the bottom portion at one side is different from a second distance between a second projection of the top portion on the bottom portion and the bottom portion at another side.
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公开(公告)号：US11935969B2
公开(公告)日：2024-03-19
申请号：US17092674
申请日：2020-11-09
Applicant: EPISTAR CORPORATION
Inventor： Shih-Chang Lee , Shiuan-Leh Lin , I-Hung Chen , Chu-Jih Su , Chao-Shun Huang
IPC: H01L31/0216 , H01L31/0203
CPC classification number: H01L31/02162 , H01L31/0203
Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.
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公开(公告)号：US20210151612A1
公开(公告)日：2021-05-20
申请号：US17092674
申请日：2020-11-09
Applicant: EPISTAR CORPORATION
Inventor： Shih-Chang Lee , Shiuan-Leh Lin , I-Hung Chen , Chu-Jih Su , Chao-Shun Huang
IPC: H01L31/0216 , H01L31/0203
Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.
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公开(公告)号：US10886433B2
公开(公告)日：2021-01-05
申请号：US16453520
申请日：2019-06-26
Applicant: EPISTAR CORPORATION
Inventor： Ta-Cheng Hsu , Ching-Shian Yeh , Chao-Shun Huang , Ying-Yong Su , Ya-Lan Yang , Ya-Ju Lee
Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.
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公开(公告)号：US09780259B2
公开(公告)日：2017-10-03
申请号：US14986791
申请日：2016-01-04
Applicant: EPISTAR CORPORATION
Inventor： Ta-Cheng Hsu , Ya-Lan Yang , Ying-Yong Su , Ching-Shian Yeh , Chao-Shun Huang , Ya-Ju Lee
CPC classification number: H01L33/22 , H01L33/007 , H01L33/32
Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.
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