公开(公告)号：US10032954B2

公开(公告)日：2018-07-24

申请号：US15591544

申请日：2017-05-10

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US10741721B2

公开(公告)日：2020-08-11

申请号：US16374282

申请日：2019-04-03

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L33/06 ,  H01L33/60 ,  H01L33/64 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US10312407B2

公开(公告)日：2019-06-04

申请号：US16041398

申请日：2018-07-20

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/60 ,  H01L33/64

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20160336482A1

公开(公告)日：2016-11-17

申请号：US14709985

申请日：2015-05-12

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping Lu ,  Cheng-Feng Yu ,  Wen-Luh Liao ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Chih-Chiang Lu

IPC: H01L33/08 ,  H01L33/10 ,  H01L33/22

CPC classification number: H01L25/0756 ,  H01L33/10 ,  H01L33/22 ,  H01L33/38

Abstract: An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.

Abstract translation: 本发明的目的是提供一种发光器件，其包括：衬底，具有第一横向宽度的第一发光半导体堆叠，所述第一发光半导体堆叠包括发射第一辐射的第一有源层， 运行中第一主波长; 第二发光半导体堆叠，其具有小于第一横向宽度的第二横向宽度，并且包括在操作期间发射比第一主波长短的第二主波长的第二辐射的第二有源层; 以及在第一发光半导体堆叠和第二发光半导体堆叠之间的第一导电连接结构，其中第一导电连接结构与第一有源层和第二有源层晶格失配，第一发光 半导体堆叠在基板和第二发光半导体堆叠之间。