公开(公告)号：US09614127B2

公开(公告)日：2017-04-04

申请号：US14902795

申请日：2013-07-05

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi Ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/48 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US10038128B2

公开(公告)日：2018-07-31

申请号：US15702286

申请日：2017-09-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi-ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

公开(公告)号：US09793458B2

公开(公告)日：2017-10-17

申请号：US15438430

申请日：2017-02-21

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi Ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L25/16

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US10693039B2

公开(公告)日：2020-06-23

申请号：US15602421

申请日：2017-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

公开(公告)号：US09685588B2

公开(公告)日：2017-06-20

申请号：US15083743

申请日：2016-03-29

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.

公开(公告)号：US09331247B2

公开(公告)日：2016-05-03

申请号：US14286685

申请日：2014-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Abstract translation: 发光元件包括反射层; 在反射层上的第一透明层; 在所述第一透明层上具有活性层的发光层; 以及形成在第一透明层中的空腔。