公开(公告)号：US11677046B2

公开(公告)日：2023-06-13

申请号：US17879547

申请日：2022-08-02

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/42 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/40

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US11575070B2

公开(公告)日：2023-02-07

申请号：US17496155

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US10950652B2

公开(公告)日：2021-03-16

申请号：US16037862

申请日：2018-07-17

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

公开(公告)号：US20170077358A1

公开(公告)日：2017-03-16

申请号：US15359372

申请日：2016-11-22

Applicant: Epistar Corporation

Inventor： Po-Shun Chiu ,  De-Shan Kuo ,  Chun-Hsiang Tu ,  Chun-Teng Ko

IPC: H01L33/46 ,  H01L33/06

CPC classification number: H01L33/46 ,  F21K9/232 ,  F21K9/237 ,  F21V3/00 ,  F21V3/02 ,  F21V5/04 ,  F21V13/02 ,  F21V29/77 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/405 ,  H01L33/60

Abstract: A light-emitting element comprises a sapphire substrate, a light-emitting stacked layer on the sapphire substrate, a first window layer under the sapphire substrate, and a DBR under the first window layer, wherein a material of the first window layer is an insulating material, wherein a thickness of the first window layer is between 300 nm and 1000 nm, wherein the DBR comprises a plurality of sublayers, and wherein a material of one of the plurality of sublayers is the same as the insulating material of the first window layer.

Abstract translation: 发光元件包括蓝宝石衬底，蓝宝石衬底上的发光层叠层，蓝宝石衬底下方的第一窗口层和第一窗口层下方的DBR，其中第一窗口层的材料为绝缘体 材料，其中所述第一窗口层的厚度在300nm和1000nm之间，其中所述DBR包括多个子层，并且其中所述多个子层中的一个的材料与所述第一窗口层的绝缘材料相同 。

公开(公告)号：US20150349210A1

公开(公告)日：2015-12-03

申请号：US14825899

申请日：2015-08-13

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Chun-Teng Ko ,  Po-Shun Chiu ,  Chia-Liang Hsu

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

Abstract translation: 发光二极管结构包括第一半导体层; 第一半导体层下面的第二半导体层; 在所述第一半导体层和所述第二半导体层之间的用于发光的发光层; 用于引线接合的第一半导体层上的第一电焊盘; 连接到第一电焊盘的第一延伸部; 以及覆盖所述第一延伸部并暴露所述第一电焊盘的第一反射层，其中所述第一电焊盘和所述第一延伸部具有相同的厚度，并且所述第一反射层的反射率高于所述第一延伸部的反射率。

公开(公告)号：US09112117B2

公开(公告)日：2015-08-18

申请号：US13836681

申请日：2013-03-15

Applicant: EPISTAR CORPORATION

Inventor： Chia-Liang Hsu ,  Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Ting-Chia Ko ,  Po-Shun Chiu

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

Abstract translation: 一种发光二极管结构，包括：基板; 在所述基板上的发光半导体堆叠，其中，所述发光半导体堆叠包括第一半导体层，与所述第一半导体层具有不同极性的第二半导体层，以及所述第一半导体层与所述第二半导体层之间的发光层 半导体层; 在所述基板上的第一电焊盘，其中所述第一电焊盘与所述发光半导体堆叠分离并且电连接到所述第一半导体层; 以及在所述基板上的第二电焊盘，其中所述第二电焊盘离开所述发光半导体堆叠并且电连接到所述第二半导体层，其中所述第一电焊盘和所述第二电焊盘不高于所述发光 半导体堆叠

公开(公告)号：US11437547B2

公开(公告)日：2022-09-06

申请号：US17102171

申请日：2020-11-23

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L29/06 ,  H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62 ,  H01L33/22 ,  H01L33/00

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US11251340B2

公开(公告)日：2022-02-15

申请号：US16749536

申请日：2020-01-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying Cho ,  De-Shan Kuo

IPC: H01L33/46 ,  H01L33/10 ,  H01L33/60 ,  H01L33/50

Abstract: A light-emitting device includes a substrate, having a first surface and second surface opposite to the first surface; a light-emitting stack, formed on the first surface of the substrate, the light-emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer, wherein the active layer is formed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a distributed Bragg reflection structure (DBR), formed on the second surface of the substrate, including a plurality of dielectric-layer pair formed sequentially on the second surface, wherein each of the dielectric-layer pairs includes respectively a first dielectric layer having a first optical thickness and a second dielectric layer having a second optical thickness, and wherein from the second surface, the first dielectric layer of each of the dielectric-layer pairs is thicker than the first dielectric layer of the adjacent previous dielectric-layer pair.

公开(公告)号：US10411177B2

公开(公告)日：2019-09-10

申请号：US16019136

申请日：2018-06-26

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L33/62 ,  H01L33/08 ,  H01L33/60 ,  H01L27/15 ,  H01L33/30 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US09893257B2

公开(公告)日：2018-02-13

申请号：US15357334

申请日：2016-11-21

Applicant: EPISTAR CORPORATION

Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

IPC: H01L29/10 ,  H01L33/62 ,  H01L33/08 ,  H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.