公开(公告)号：US12125943B2

公开(公告)日：2024-10-22

申请号：US18505348

申请日：2023-11-09

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01L33/325

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer. The first nitride semiconductor layer includes a first indium content, a first aluminum content and a first conductivity-type dopant. The second nitride semiconductor layer includes a second indium content, a second aluminum content and a second conductivity-type dopant. The electron blocking structure includes a first semiconductor layer including a third indium content and a third aluminum content; wherein the third indium content is greater than the second indium content.

公开(公告)号：US10693038B2

公开(公告)日：2020-06-23

申请号：US16182919

申请日：2018-11-07

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/04

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.

公开(公告)号：US10910518B2

公开(公告)日：2021-02-02

申请号：US15929614

申请日：2020-05-13

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/04

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer and the second In-containing layer each includes indium, aluminum and gallium, the first In-containing layer has a first aluminum content, the second In-containing layer has a second aluminum content, and the second aluminum content is less than the first aluminum content.

公开(公告)号：US11848195B2

公开(公告)日：2023-12-19

申请号：US17980093

申请日：2022-11-03

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/04

CPC classification number: H01L33/145 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01L33/325

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.

公开(公告)号：US11522102B2

公开(公告)日：2022-12-06

申请号：US17149814

申请日：2021-01-15

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/04

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.