公开(公告)号：US10529896B2

公开(公告)日：2020-01-07

申请号：US16136102

申请日：2018-09-19

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru Chang ,  Wen-Luh Liao ,  Chun-Yu Lin ,  Hsin-Chan Chung ,  Hung-Ta Cheng

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/62 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

公开(公告)号：US09847450B2

公开(公告)日：2017-12-19

申请号：US14520067

申请日：2014-10-21

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Chih-Chiang Lu ,  Shih-Chang Lee ,  Hung-Ta Cheng ,  Hsin-Chan Chung ,  Yi-Chieh Lin

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/20 ,  H01L33/42

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

公开(公告)号：US10741721B2

公开(公告)日：2020-08-11

申请号：US16374282

申请日：2019-04-03

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L33/06 ,  H01L33/60 ,  H01L33/64 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US11005007B2

公开(公告)日：2021-05-11

申请号：US16568546

申请日：2019-09-12

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Chih-Chiang Lu ,  Shih-Chang Lee ,  Hung-Ta Cheng ,  Hsin-Chan Chung ,  Yi-Chieh Lin

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/20 ,  H01L33/42

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

公开(公告)号：US10453995B2

公开(公告)日：2019-10-22

申请号：US15686331

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Chih-Chiang Lu ,  Shih-Chang Lee ,  Hung-Ta Cheng ,  Hsin-Chan Chung ,  Yi-Chieh Lin

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/20 ,  H01L33/42

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

公开(公告)号：US10032954B2

公开(公告)日：2018-07-24

申请号：US15591544

申请日：2017-05-10

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US10700240B2

公开(公告)日：2020-06-30

申请号：US16700614

申请日：2019-12-02

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru Chang ,  Wen-Luh Liao ,  Chun-Yu Lin ,  Hsin-Chan Chung ,  Hung-Ta Cheng

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/24 ,  H01L33/62 ,  H01L33/30 ,  H01L33/22 ,  H01L33/08 ,  H01L33/20

Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

公开(公告)号：US10109771B2

公开(公告)日：2018-10-23

申请号：US15653038

申请日：2017-07-18

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru Chang ,  Wen-Luh Liao ,  Chun-Yu Lin ,  Hsin-Chan Chung ,  Hung-Ta Cheng

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/22 ,  H01L33/20 ,  H01L33/08

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

公开(公告)号：US09601667B2

公开(公告)日：2017-03-21

申请号：US15004450

申请日：2016-01-22

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Hung-Ta Cheng ,  Yao-Ru Chang ,  Shih-I Chen ,  Chia-Liang Hsu

IPC: H01L33/36 ,  H01L33/46 ,  H01L33/06 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.

公开(公告)号：US09276176B2

公开(公告)日：2016-03-01

申请号：US14515147

申请日：2014-10-15

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Hung-Ta Cheng ,  Yao-Ru Chang ,  Shih-I Chen ,  Chia-Liang Hsu

IPC: H01L33/36 ,  H01L33/46 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

Abstract: A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the refractive index of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%.

Abstract translation: 发光装置包括：具有活性层的发光叠层; 在发光叠层上的透明绝缘层; 以及在透明绝缘层上具有第一电极的电极结构; 其中，所述第一电极的远离所述透明绝缘层的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积，所述透明绝缘层的折射率在1 和3.4，并且透明绝缘层的透射率大于80％。