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    Light-emitting device
    2.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11011680B2

    公开(公告)日：2021-05-18

    申请号：US16566585

    申请日：2019-09-10

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  F21K9/23 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10177290B2

    公开(公告)日：2019-01-08

    申请号：US15482422

    申请日：2017-04-07

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun Hsieh ,  Jen-Chieh Yu ,  Wei-Fan Ke

    IPC: H01L33/60 ,  H01L23/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/50 ,  H01L33/62 ,  H01L33/30 ,  H01L33/40 ,  H01L33/46

    Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20200020829A1

    公开(公告)日：2020-01-16

    申请号：US16566585

    申请日：2019-09-10

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

    Light-emitting module and display apparatus
    7.
    发明授权
    Light-emitting module and display apparatus 有权

    公开(公告)号：US11996493B2

    公开(公告)日：2024-05-28

    申请号：US17395641

    申请日：2021-08-06

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun Hsieh ,  Jen-Chieh Yu ,  Chun-Wei Chen

    IPC: H01L31/147 ,  G09G3/32 ,  H05B45/12

    CPC classification number: H01L31/147 ,  G09G3/32 ,  H05B45/12 ,  G09G2320/0626

    Abstract: The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.

    Light-emitting device and manufacturing method thereof
    8.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US10770635B2

    公开(公告)日：2020-09-08

    申请号：US16419570

    申请日：2019-05-22

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Liang Liu ,  Ming-Chi Hsu ,  Jen-Chieh Yu

    IPC: H01L33/48 ,  H01L33/50 ,  H01L33/60

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

    Light-emitting device
    9.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10446721B2

    公开(公告)日：2019-10-15

    申请号：US15880908

    申请日：2018-01-26

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

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