公开(公告)号：US09847454B2

公开(公告)日：2017-12-19

申请号：US14873547

申请日：2015-10-02

Applicant: EPISTAR CORPORATION

Inventor： Kuo-Feng Huang ,  Cheng-Hsing Chiang ,  Jih-Ming Tu

IPC: H01L33/22 ,  H01L33/30 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14 ,  H01L33/38

CPC classification number: H01L33/30 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.

公开(公告)号：US10811564B2

公开(公告)日：2020-10-20

申请号：US16247191

申请日：2019-01-14

Applicant: EPISTAR CORPORATION

Inventor： Kuo-Feng Huang ,  Cheng-Hsing Chiang ,  Jih-Ming Tu

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.

公开(公告)号：US10199541B2

公开(公告)日：2019-02-05

申请号：US15722551

申请日：2017-10-02

Applicant: EPISTAR CORPORATION

Inventor： Kuo-Feng Huang ,  Cheng-Hsing Chiang ,  Jih-Ming Tu

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.