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公开(公告)号:US20210408310A1
公开(公告)日:2021-12-30
申请号:US16917223
申请日:2020-06-30
Applicant: EPISTAR CORPORATION
Inventor: Chu-Jih Su , Chao-Shun Huang , Shiuan-Leh Lin , Shih-Chang Lee , Wen-Luh Liao , Mei-Chun Liu
IPC: H01L31/055 , H01L31/0304 , H01L31/0224 , H01L25/16
Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.
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公开(公告)号:US11894481B2
公开(公告)日:2024-02-06
申请号:US17510522
申请日:2021-10-26
Applicant: EPISTAR CORPORATION
Inventor: Yi-Chieh Lin , Shiuan-Leh Lin , Yung-Fu Chang , Shih-Chang Lee , Chia-Liang Hsu , Yi Hsiao , Wen-Luh Liao , Hong-Chi Shih , Mei-Chun Liu
IPC: H01L31/02 , H01L31/167 , H01L31/0304 , H01L31/0232 , H01L25/16 , A61B5/024 , A61B5/021 , A61B5/1455 , A61B5/145 , G01J3/10
CPC classification number: H01L31/167 , A61B5/02141 , A61B5/02427 , A61B5/02433 , A61B5/14546 , A61B5/14552 , G01J3/10 , H01L25/167 , H01L31/02005 , H01L31/02325 , H01L31/03046
Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.
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公开(公告)号:US11335826B2
公开(公告)日:2022-05-17
申请号:US16917223
申请日:2020-06-30
Applicant: EPISTAR CORPORATION
Inventor: Chu-Jih Su , Chao-Shun Huang , Shiuan-Leh Lin , Shih-Chang Lee , Wen-Luh Liao , Mei-Chun Liu
IPC: H01L31/055 , H01L25/16 , H01L31/0224 , H01L31/0304 , H01L31/12 , H01L31/101
Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.
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公开(公告)号:US11158757B2
公开(公告)日:2021-10-26
申请号:US16697340
申请日:2019-11-27
Applicant: EPISTAR CORPORATION
Inventor: Yi-Chieh Lin , Shiuan-Leh Lin , Yung-Fu Chang , Shih-Chang Lee , Chia-Liang Hsu , Yi Hsiao , Wen-Luh Liao , Hong-Chi Shih , Mei-Chun Liu
IPC: H01L31/0304 , H01L31/167 , H01L31/0232 , H01L31/02 , H01L25/16 , A61B5/024 , A61B5/021 , A61B5/1455 , A61B5/145 , G01J3/10
Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.
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