中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

28 records (took 0.015 seconds)

    HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF
    3.
    发明申请
    HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF 审中-公开
    高亮度发光二极管结构及其制造方法

    公开(公告)号：US20150349210A1

    公开(公告)日：2015-12-03

    申请号：US14825899

    申请日：2015-08-13

    Applicant: EPISTAR CORPORATION

    Inventor： Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Chun-Teng Ko ,  Po-Shun Chiu ,  Chia-Liang Hsu

    IPC: H01L33/46 ,  H01L33/40 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

    Abstract translation: 发光二极管结构包括第一半导体层; 第一半导体层下面的第二半导体层; 在所述第一半导体层和所述第二半导体层之间的用于发光的发光层; 用于引线接合的第一半导体层上的第一电焊盘; 连接到第一电焊盘的第一延伸部; 以及覆盖所述第一延伸部并暴露所述第一电焊盘的第一反射层，其中所述第一电焊盘和所述第一延伸部具有相同的厚度，并且所述第一反射层的反射率高于所述第一延伸部的反射率。

    High brightness light emitting diode structure
    4.
    发明授权
    High brightness light emitting diode structure 有权
    高亮度发光二极管结构

    公开(公告)号：US09112117B2

    公开(公告)日：2015-08-18

    申请号：US13836681

    申请日：2013-03-15

    Applicant: EPISTAR CORPORATION

    Inventor： Chia-Liang Hsu ,  Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Ting-Chia Ko ,  Po-Shun Chiu

    IPC: H01L33/00 ,  H01L33/46 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

    Abstract translation: 一种发光二极管结构，包括：基板; 在所述基板上的发光半导体堆叠，其中，所述发光半导体堆叠包括第一半导体层，与所述第一半导体层具有不同极性的第二半导体层，以及所述第一半导体层与所述第二半导体层之间的发光层 半导体层; 在所述基板上的第一电焊盘，其中所述第一电焊盘与所述发光半导体堆叠分离并且电连接到所述第一半导体层; 以及在所述基板上的第二电焊盘，其中所述第二电焊盘离开所述发光半导体堆叠并且电连接到所述第二半导体层，其中所述第一电焊盘和所述第二电焊盘不高于所述发光 半导体堆叠

    Light-emitting device
    5.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10396243B2

    公开(公告)日：2019-08-27

    申请号：US16030437

    申请日：2018-07-09

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Kai Chung ,  Po-Shun Chiu ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Tsun-Kai Ko ,  Yu-Ting Huang

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/20 ,  H01L33/14

    Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.

    Light-emitting device
    6.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US09755109B2

    公开(公告)日：2017-09-05

    申请号：US15228529

    申请日：2016-08-04

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Kai Chung ,  Po-Shun Chiu ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Tsun-Kai Ko ,  Yu-Ting Huang

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/20 ,  H01L33/14

    CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

    Abstract: A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.

    Light emitting device having multi-layered electrode structure
    7.
    发明授权
    Light emitting device having multi-layered electrode structure 有权
    具有多层电极结构的发光器件

    公开(公告)号：US09530948B2

    公开(公告)日：2016-12-27

    申请号：US15049917

    申请日：2016-02-22

    Applicant: EPISTAR CORPORATION

    Inventor： De-Shan Kuo ,  Ting-Chia Ko ,  Chun-Hsiang Tu ,  Po-Shun Chiu

    IPC: H01L29/18 ,  H01L33/60 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L27/15

    CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

    Abstract translation: 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。

    Light-emitting device
    8.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08928022B2

    公开(公告)日：2015-01-06

    申请号：US13934049

    申请日：2013-07-02

    Applicant: Epistar Corporation

    Inventor： De-Shan Kuo ,  Chun-Hsiang Tu ,  Po-Shun Chiu ,  Chun-Teng Ko ,  Min-Hsun Hsieh

    IPC: H01L29/06 ,  H01L33/22 ,  H01L33/42 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.

    Abstract translation: 一种发光器件，包括：具有第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上的第二导电型半导体层; 形成在第二导电型半导体层上的透明导电氧化物层，其中具有第一部分和第二部分的透明导电氧化物层和透明导电氧化物层的上表面是纹理表面; 形成在透明导电氧化物层的第二部分上的第一电极和形成在第一导电类型半导体层上的第二电极; 形成在透明导电氧化物层的第一部分上的平坦化层和第二电极; 以及形成在没有第一电极和第二电极的平坦化层上的反射层。

    Light-emitting device and manufacturing method thereof
    10.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US11437427B2

    公开(公告)日：2022-09-06

    申请号：US16750227

    申请日：2020-01-23

    Applicant: EPISTAR CORPORATION

    Inventor： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

    IPC: H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

    Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

Patent Agency Ranking