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公开(公告)号：US10374130B2
公开(公告)日：2019-08-06
申请号：US15279149
申请日：2016-09-28
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
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公开(公告)号：US10062730B2
公开(公告)日：2018-08-28
申请号：US15196717
申请日：2016-06-29
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, comprising a first part formed on the first light-emitting unit or the second light-emitting unit, and a second part conformably formed on the trench covering the bottom portion and sidewalls of the first light-emitting unit and the second light-emitting unit; and an electrical connection, electrically connecting the first light-emitting unit and the second light-emitting unit, comprising a bridging portion formed on the second part of the insulating layer, and only covering a portion of the trench; and a joining portion, extending from the bridging portion and formed on the first part of the insulating layer; wherein the bridging portion is wider than the joining portion in a top view.
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3.发明授权公开(公告)号：US09385108B2
公开(公告)日：2016-07-05
申请号：US14678668
申请日：2015-04-03
Applicant: Epistar Corporation
Inventor： Chein-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Alexander Chan Wang , Min-Hsun Hsieh , Cheng Nan Han
IPC: H01L21/20 , H01L25/075 , F21K99/00 , H01L33/60 , F21Y101/02 , F21Y105/00 , F21Y113/00 , H01L33/50
CPC classification number: H01L25/0753 , F21K9/00 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10 , H01L33/50 , H01L33/505 , H01L33/60 , H01L2224/48091 , H01L2224/48137 , H01L2924/0002 , H01L2924/00014 , H01L2924/00
Abstract: The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light.
Abstract translation: 本申请提供了电连接到电源系统的多维发光装置。 多维发光装置包括基板，蓝色发光二极管阵列和一个或多个荧光体层。 设置在基板上的蓝色发光二极管阵列包括电连接的多个蓝色发光二极管芯片。 多维发光装置包括围绕中心区域布置的中心区域和多个周边区域。 磷光体层覆盖中心区域。 当电源系统提供高电压时，多维发光装置的中心区域和外围区域分别提供第一光和多个第二光。 第一个光和第二个光被混合成混合光。
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公开(公告)号：USD743354S1
公开(公告)日：2015-11-17
申请号：US29481047
申请日：2014-01-31
Applicant: EPISTAR CORPORATION
Designer： Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
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公开(公告)号：US09153738B2
公开(公告)日：2015-10-06
申请号：US14718242
申请日：2015-05-21
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a plurality of extensions formed on the first semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein one of the plurality of extensions is formed beyond a projected area of the second conductive part and not covered by the first conductive part.
Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 形成在所述第一半导体层上的多个延伸部; 以及第一导电部分和第二导电部分，其形成在所述发光半导体堆叠上并且分别电连接到所述第一半导体层和所述第二半导体层，其中所述多个延伸部中的一个形成在所述第二导电 部分未被第一导电部件覆盖。
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Patent Agency Ranking
公开(公告)号：US09076946B2
公开(公告)日：2015-07-07
申请号：US14098911
申请日：2013-12-06
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.
Abstract translation: 发光元件包括：包含第一半导体层的发光半导体堆叠; 在所述第一半导体层上的第二半导体层; 以及在所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 在所述发光半导体堆叠上的第一保护层，并且包括第一通孔; 以及在所述第一保护层上的导电接触层，并且通过所述第一通孔电连接到所述第一电极。
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公开(公告)号：US20130113014A1
公开(公告)日：2013-05-09
申请号：US13666561
申请日：2012-11-01
Applicant: Epistar Corporation
Inventor： Schang-Jing Hon , Chao-Hsing Chen , Chien-Fu Shen , Jia-Kuen Wang
IPC: H01L33/36 , H01L31/0224
CPC classification number: H01L31/022425 , H01L33/38 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , Y02E10/50 , H01L2924/00014 , H01L2924/00
Abstract: The application provides an optoelectronic device structure, comprising a semiconductor stack, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode electrically connecting with the first conductivity type semiconductor layer, and further comprising a first extension electrode; a second electrode electrically connecting with the second conductivity type semiconductor layer; and a plurality of electrical restraint contact areas between the semiconductor stack and the first extension electrode, wherein the plurality of electrical restraint contact areas is distributed in a variable interval.
Abstract translation: 该应用提供了一种光电子器件结构，包括半导体叠层，包括第一导电类型半导体层，有源层和第二导电类型半导体层; 与第一导电类型半导体层电连接的第一电极，还包括第一延伸电极; 与第二导电类型半导体层电连接的第二电极; 以及在所述半导体堆叠和所述第一延伸电极之间的多个电抑制接触区域，其中所述多个电保护接触区域以可变间隔分布。
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公开(公告)号：US10950652B2
公开(公告)日：2021-03-16
申请号：US16037862
申请日：2018-07-17
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.
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公开(公告)号：US20190103515A1
公开(公告)日：2019-04-04
申请号：US16189540
申请日：2018-11-13
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
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公开(公告)号：US10038029B2
公开(公告)日：2018-07-31
申请号：US14829262
申请日：2015-08-18
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Schang-Jing Hon , Alexander Chan Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
IPC: H01L27/15 , H01L25/065 , H01L25/075 , H01L27/32 , H01L33/50 , H01L33/62
Abstract: A light-emitting device includes a growth substrate, a plurality of light-emitting diode units formed on the growth substrate and arranged in a closed loop, an electrode directly formed on the growth substrate, an electrical connection structure formed on the growth substrate and connecting the plurality of light-emitting diode units with the electrode, and a plurality of rectifying diodes connecting to respective nodes of the closed loop.
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