公开(公告)号：US10670244B2

公开(公告)日：2020-06-02

申请号：US16365115

申请日：2019-03-26

Applicant: EPISTAR CORPORATION

Inventor： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC: F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L23/00 ,  H01L33/00 ,  F21Y107/00 ,  F21Y115/10

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

公开(公告)号：US10655826B2

公开(公告)日：2020-05-19

申请号：US16404187

申请日：2019-05-06

Applicant: EPISTAR CORPORATION

Inventor： Chih-Ping Ho ,  Chih-Wei Liao ,  Shyi-Ming Pan

IPC: F21V21/14 ,  H01L33/48 ,  H01L25/075 ,  H01L33/50 ,  H01L33/62 ,  H01L27/15 ,  F21V21/002 ,  H01L33/08 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  F21K9/20 ,  F21Y115/10 ,  F21Y107/50 ,  F21Y109/00 ,  F21K9/232 ,  F21K9/65 ,  F21K9/27 ,  H01L33/00 ,  H01L33/20 ,  F21Y107/00 ,  H01L23/00

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

公开(公告)号：US20180342650A1

公开(公告)日：2018-11-29

申请号：US16051884

申请日：2018-08-01

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Kuang Yang ,  Hui-Ching Feng ,  Chien-Pin Hsu ,  Kuo-Hui Yu ,  Shyi-Ming Pan

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/08 ,  H01L33/40

Abstract: A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

公开(公告)号：US10074777B2

公开(公告)日：2018-09-11

申请号：US14469593

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Cheng-Kuang Yang ,  Hui-Ching Feng ,  Chien-Pin Hsu ,  Kuo-Hui Yu ,  Shyi-Ming Pan

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

公开(公告)号：US10281123B2

公开(公告)日：2019-05-07

申请号：US16016401

申请日：2018-06-22

Applicant: EPISTAR CORPORATION

Inventor： Chih-Ping Ho ,  Chih-Wei Liao ,  Shyi-Ming Pan

IPC: F21K99/00 ,  F21V21/14 ,  H01L25/075 ,  H01L33/50 ,  H01L33/62 ,  H01L27/15 ,  H01L33/48 ,  F21V21/002 ,  H01L33/08 ,  F21K9/20 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L33/00 ,  H01L33/20 ,  F21Y115/10 ,  F21Y107/00 ,  H01L23/00

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

公开(公告)号：US10030857B2

公开(公告)日：2018-07-24

申请号：US15631482

申请日：2017-06-23

Applicant: EPISTAR CORPORATION

Inventor： Chih-Ping Ho ,  Chih-Wei Liao ,  Shyi-Ming Pan

IPC: H01L33/48 ,  F21V21/14 ,  H01L33/50 ,  H01L33/62 ,  F21V17/10 ,  F21V23/06 ,  F21V3/02 ,  F21V29/85 ,  F21Y115/10

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

公开(公告)号：US11255524B2

公开(公告)日：2022-02-22

申请号：US16887948

申请日：2020-05-29

Applicant: EPISTAR CORPORATION

Inventor： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC: F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21K9/232 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L23/00 ,  H01L33/00 ,  F21Y107/00 ,  F21Y115/10

Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 μm and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

公开(公告)号：US10306714B2

公开(公告)日：2019-05-28

申请号：US15601616

申请日：2017-05-22

Applicant: EPISTAR CORPORATION

Inventor： Chih-Shu Huang ,  Chun-Ju Tun ,  Shyi-Ming Pan ,  Wei-Kang Cheng ,  Keng-Ying Liao

IPC: H01L27/06 ,  H01L27/15 ,  H01L33/00 ,  H05B33/08 ,  H05B37/02 ,  H01L29/872 ,  H05B33/02

Abstract: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.

公开(公告)号：US10989396B2

公开(公告)日：2021-04-27

申请号：US16876987

申请日：2020-05-18

Applicant: EPISTAR CORPORATION

Inventor： Chih-Ping Ho ,  Chih-Wei Liao ,  Shyi-Ming Pan

IPC: F21V21/14 ,  H01L25/075 ,  H01L33/50 ,  F21K9/20 ,  H01L33/08 ,  F21Y115/10 ,  F21K9/65 ,  H01L33/00 ,  H01L33/62 ,  H01L27/15 ,  H01L33/48 ,  F21V21/002 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  F21Y107/50 ,  F21Y109/00 ,  F21K9/232 ,  F21K9/27 ,  H01L33/20 ,  F21Y107/00 ,  H01L23/00

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

公开(公告)号：US10586895B2

公开(公告)日：2020-03-10

申请号：US16294411

申请日：2019-03-06

Applicant: EPISTAR CORPORATION

Inventor： Han-Zhong Liao ,  Chih-Hsuan Lu ,  Fang-I Li ,  Wei-Kang Cheng ,  Shyi-Ming Pan

IPC: H01L33/42 ,  H01L33/20 ,  H01L33/38

Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesses corresponding to the plurality of indentations.