公开(公告)号：US11990575B2

公开(公告)日：2024-05-21

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11699776B2

公开(公告)日：2023-07-11

申请号：US17185551

申请日：2021-02-25

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

公开(公告)号：US10199544B2

公开(公告)日：2019-02-05

申请号：US15858534

申请日：2017-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/40

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US09893241B2

公开(公告)日：2018-02-13

申请号：US15350893

申请日：2016-11-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/40

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：USD797064S1

公开(公告)日：2017-09-12

申请号：US29577775

申请日：2016-09-15

Applicant: EPISTAR CORPORATION

Designer： Hui-Chun Yeh ,  Jhih-Yong Yang ,  Chien-Fu Shen ,  Tsun-Kai Ko

公开(公告)号：USD782426S1

公开(公告)日：2017-03-28

申请号：US29547608

申请日：2015-12-04

Applicant: EPISTAR CORPORATION

Designer： Hui-Chun Yeh ,  Jhih-Yong Yang ,  Chien-Fu Shen ,  Tsun-Kai Ko

公开(公告)号：US09525104B2

公开(公告)日：2016-12-20

申请号：US14162590

申请日：2014-01-23

Applicant: EPISTAR CORPORATION

Inventor： Yu-Yao Lin ,  Tsun-Kai Ko ,  Chien-Yuan Tseng ,  Yen-Chih Chen ,  Chun-Ta Yu ,  Shih-Chun Ling ,  Cheng-Hsiung Yen ,  Hsin-Hsien Wu

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/32 ,  H01L33/14 ,  H01L33/22

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/22

Abstract: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlxGa1-xN (0

Abstract translation: 本申请公开了一种发光二极管，包括第一半导体层，第一半导体层上的有源层，有源层上的第二半导体层和第二半导体层上的半导体接触层。 第二半导体层包括在第一子层上形成的第一子层和第二子层，其中第二子层的材料包括Al x Ga 1-x N（0

公开(公告)号：USD770399S1

公开(公告)日：2016-11-01

申请号：US29529615

申请日：2015-06-09

Applicant: EPISTAR CORPORATION

Designer： Hui-Chun Yeh ,  Chien-Fu Shen ,  Tsun-Kai Ko

公开(公告)号：US09406719B2

公开(公告)日：2016-08-02

申请号：US14924264

申请日：2015-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L33/62 ,  H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit, comprising a bottom portion exposing the substrate; an insulating layer arranged on the trench, conformably covering the bottom portion and sidewalls of the first unit and the second unit; and an electrical connection, conformably covering the insulating layer, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion covers the trench, and the joining portion covers the first unit and the second unit.

Abstract translation: 1.一种发光结构，包括基板; 分别形成在所述基板上的第一单元和第二单元; 第一单元和第二单元之间的沟槽，包括露出衬底的底部; 布置在所述沟槽上的绝缘层，其适配地覆盖所述第一单元和所述第二单元的底部和侧壁; 以及电连接，其顺应地覆盖绝缘层，电连接第一单元和第二单元，并且包括桥接部分和从桥接部分延伸的接合部分，其中桥接部分比接合部分宽，桥接部分覆盖 沟槽和接合部分覆盖第一单元和第二单元。

公开(公告)号：US09306123B2

公开(公告)日：2016-04-05

申请号：US14827872

申请日：2015-08-17

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.

Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极，其包括接触区域和与第一半导体层电连接的延伸部分，其中延伸部连接到接触区域; 在所述第二半导体层上的第二电极; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一电极和所述第二电极的第一导电部分和第二导电部分，其中所述延伸部形成在所述第二导电部件的投影区域之外， 第一导电部分，并且接触区域被第一导电部件覆盖。