公开(公告)号：US09087946B2

公开(公告)日：2015-07-21

申请号：US13661556

申请日：2012-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yu-Yao Lin ,  Yen-Chih Chen ,  Chien-Yuan Tseng ,  Tsun-Kai Ko ,  Chun-Ta Yu ,  Shih-Chun Ling ,  Cheng-Hsiung Yen ,  Hsin-Hsien Wu

IPC: H01L33/04 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.

Abstract translation: 发光器件包括第一类型半导体层，第一类型半导体层上的多量子阱结构和多量子阱结构上的第二类型半导体层，其中多量子阱结构包括第一部分 靠近第一类型半导体层，靠近第二类型半导体层的第二部分和在第一部分和第二部分之间的应变释放层，并且包括包括铟的第一层，在第一层上包括铝的第二层和 第三层包括第二层上的铟，其中第三层的铟浓度高于第一层的铟浓度。

公开(公告)号：US09525104B2

公开(公告)日：2016-12-20

申请号：US14162590

申请日：2014-01-23

Applicant: EPISTAR CORPORATION

Inventor： Yu-Yao Lin ,  Tsun-Kai Ko ,  Chien-Yuan Tseng ,  Yen-Chih Chen ,  Chun-Ta Yu ,  Shih-Chun Ling ,  Cheng-Hsiung Yen ,  Hsin-Hsien Wu

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/32 ,  H01L33/14 ,  H01L33/22

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/22

Abstract: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlxGa1-xN (0

Abstract translation: 本申请公开了一种发光二极管，包括第一半导体层，第一半导体层上的有源层，有源层上的第二半导体层和第二半导体层上的半导体接触层。 第二半导体层包括在第一子层上形成的第一子层和第二子层，其中第二子层的材料包括Al x Ga 1-x N（0

公开(公告)号：US20140117306A1

公开(公告)日：2014-05-01

申请号：US13661556

申请日：2012-10-26

Applicant: EPISTAR CORPORATION

Inventor： YU-YAO LIN ,  Yen-Chih Chen ,  Chien-Yuan Tseng ,  Tsun-Kai Ko ,  Chun-Ta Yu ,  Shih-Chun Ling ,  Cheng-Hsiung Yen ,  Hsin-Hsien Wu

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.

Abstract translation: 发光器件包括第一类型半导体层，第一类型半导体层上的多量子阱结构和多量子阱结构上的第二类型半导体层，其中多量子阱结构包括第一部分 靠近第一类型半导体层，靠近第二类型半导体层的第二部分和在第一部分和第二部分之间的应变释放层，并且包括包括铟的第一层，在第一层上包括铝的第二层和 第三层包括第二层上的铟，其中第三层的铟浓度高于第一层的铟浓度。