中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

17 records (took 0.019 seconds)

    Light-emitting device
    1.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11011680B2

    公开(公告)日：2021-05-18

    申请号：US16566585

    申请日：2019-09-10

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  F21K9/23 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

    Light-emitting device and manufacturing method thereof
    2.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US12230740B2

    公开(公告)日：2025-02-18

    申请号：US17237825

    申请日：2021-04-22

    Applicant: EPISTAR CORPORATION

    Inventor： Jhih-Yong Yang ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Chao-Hsing Chen ,  Yi-Hung Lin ,  Meng-Hsiang Hong ,  Kuo-Ching Hung ,  Cheng-Lin Lu

    IPC: H01L33/46 ,  H01L27/15 ,  H01L33/10 ,  H01L33/38 ,  H01L33/62

    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11563149B2

    公开(公告)日：2023-01-24

    申请号：US17357164

    申请日：2021-06-24

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

    Light-emitting device
    5.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10511140B2

    公开(公告)日：2019-12-17

    申请号：US16106458

    申请日：2018-08-21

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Yi-Hung Lin ,  Chih-Chiang Lu

    IPC: H01S5/187 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343 ,  H01S5/022 ,  H01S5/026 ,  H01S5/028 ,  H01S5/42

    Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

    Light-emitting array
    6.
    发明授权
    Light-emitting array 有权
    发光阵列

    公开(公告)号：US09153944B2

    公开(公告)日：2015-10-06

    申请号：US14173650

    申请日：2014-02-05

    Applicant: Epistar Corporation

    Inventor： Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Hung Lin ,  Wu-Tsung Lo ,  Ta-Chuan Kuo

    IPC: H01S5/00 ,  H01S5/42 ,  H01S5/042 ,  H01S5/343 ,  H01S5/183

    CPC classification number: H01S5/423 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/1835

    Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.

    Abstract translation: 发光阵列包括多个发光元件，其中所述多个发光元件中的每一个包括第一半导体叠层; 以及连接到所述多个发光元件的多个桥结构，其中所述多个发光元件被所述多个桥结构间隔开，其中所述多个桥结构中的每一个包括第二半导体堆叠，所述第二半导体堆叠具有 与第一半导体堆叠相同的外延堆叠。

    Light-emitting device
    7.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10446721B2

    公开(公告)日：2019-10-15

    申请号：US15880908

    申请日：2018-01-26

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

    Optoelectronic device and the manufacturing method thereof
    10.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US09252297B2

    公开(公告)日：2016-02-02

    申请号：US13693531

    申请日：2012-12-04

    Applicant: Epistar Corporation

    Inventor： Yi-Hung Lin ,  Cheng-Hong Chen

    IPC: H01L27/15 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0735 ,  H01L31/18

    CPC classification number: H01L31/02168 ,  H01L31/022425 ,  H01L31/0735 ,  H01L31/1888 ,  Y02E10/50 ,  Y02E10/544 ,  Y02P70/521

    Abstract: An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

    Abstract translation: 光电器件包括光电子半导体堆叠层; 在所述光电半导体层叠层上的导电层，所述导电层包括顶表面，与所述顶表面相对的底表面和侧表面; 覆盖上表面的第一阻挡层; 覆盖所述底面的第二阻挡层; 和第一金属氧化物层，其中所述第一金属氧化物层覆盖所述侧表面，所述第一阻挡层和所述第二阻挡层。

Patent Agency Ranking