-
Patent Agency Ranking
公开(公告)号：US20190103515A1
公开(公告)日：2019-04-04
申请号：US16189540
申请日：2018-11-13
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
-
公开(公告)号：US09087946B2
公开(公告)日：2015-07-21
申请号：US13661556
申请日：2012-10-26
Applicant: EPISTAR CORPORATION
Inventor： Yu-Yao Lin , Yen-Chih Chen , Chien-Yuan Tseng , Tsun-Kai Ko , Chun-Ta Yu , Shih-Chun Ling , Cheng-Hsiung Yen , Hsin-Hsien Wu
Abstract: A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.
Abstract translation: 发光器件包括第一类型半导体层，第一类型半导体层上的多量子阱结构和多量子阱结构上的第二类型半导体层，其中多量子阱结构包括第一部分 靠近第一类型半导体层，靠近第二类型半导体层的第二部分和在第一部分和第二部分之间的应变释放层，并且包括包括铟的第一层，在第一层上包括铝的第二层和 第三层包括第二层上的铟，其中第三层的铟浓度高于第一层的铟浓度。
-
公开(公告)号：US10559717B2
公开(公告)日：2020-02-11
申请号：US16189540
申请日：2018-11-13
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
-
公开(公告)号：US10153398B2
公开(公告)日：2018-12-11
申请号：US15800537
申请日：2017-11-01
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate.
-
公开(公告)号：US09525104B2
公开(公告)日：2016-12-20
申请号：US14162590
申请日：2014-01-23
Applicant: EPISTAR CORPORATION
Inventor： Yu-Yao Lin , Tsun-Kai Ko , Chien-Yuan Tseng , Yen-Chih Chen , Chun-Ta Yu , Shih-Chun Ling , Cheng-Hsiung Yen , Hsin-Hsien Wu
Abstract: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlxGa1-xN (0
Abstract translation: 本申请公开了一种发光二极管，包括第一半导体层，第一半导体层上的有源层，有源层上的第二半导体层和第二半导体层上的半导体接触层。 第二半导体层包括在第一子层上形成的第一子层和第二子层，其中第二子层的材料包括Al x Ga 1-x N（0
-
-
-
-
Search Results
5
records
(took 0.011 seconds)
