公开(公告)号：US20210175683A1

公开(公告)日：2021-06-10

申请号：US17147691

申请日：2021-01-13

Applicant: EXCELITAS TECHNOLOGIES CORP.

Inventor： Bartley C. Johnson ,  Walid A. Atia ,  Peter S. Whitney ,  Mark E. Kuznetsov ,  Edward J. Mallon

IPC: H01S5/04 ,  H01S5/183 ,  H01S5/50

Abstract: An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

公开(公告)号：US11139635B2

公开(公告)日：2021-10-05

申请号：US16446303

申请日：2019-06-19

Applicant: Excelitas Technologies Corp.

Inventor： Bartley C. Johnson ,  Mark E. Kuznetsov ,  Walid A. Atia ,  Peter S. Whitney

IPC: H01S5/068 ,  H01S5/183 ,  H01S5/34 ,  H01S5/343 ,  H01S5/028

Abstract: Quantum well designs for tunable VCSELs are disclosed that are tolerant of the wavelength shift. Specifically, the active region has even number of substantially uniformly spaced (¼ of the center wavelength in the semiconducting material) quantum wells.

公开(公告)号：US11749962B2

公开(公告)日：2023-09-05

申请号：US17147691

申请日：2021-01-13

Applicant: EXCELITAS TECHNOLOGIES CORP.

Inventor： Bartley C. Johnson ,  Walid A. Atia ,  Peter S. Whitney ,  Mark E. Kuznetsov ,  Edward J. Mallon

IPC: H01S5/04 ,  H01S5/183 ,  H01S5/50 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/02251 ,  H01S5/02345

CPC classification number: H01S5/041 ,  H01S5/18361 ,  H01S5/18366 ,  H01S5/5045 ,  H01S5/02251 ,  H01S5/02345 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/343

Abstract: An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

公开(公告)号：US20230208107A1

公开(公告)日：2023-06-29

申请号：US18085005

申请日：2022-12-20

Applicant: Excelitas Technologies Corp.

Inventor： Bartley C. Johnson ,  Mark E. Kuznetsov ,  Peter S. Whitney

IPC: H01S5/183 ,  H01S5/04 ,  H01S5/343

CPC classification number: H01S5/18366 ,  H01S5/041 ,  H01S5/34306 ,  H01S5/18369

Abstract: A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.

公开(公告)号：US12040594B2

公开(公告)日：2024-07-16

申请号：US18085005

申请日：2022-12-20

Applicant: Excelitas Technologies Corp.

Inventor： Bartley C. Johnson ,  Mark E. Kuznetsov ,  Peter S. Whitney

IPC: H01S5/183 ,  H01S5/04 ,  H01S5/343

CPC classification number: H01S5/18366 ,  H01S5/041 ,  H01S5/18369 ,  H01S5/34306

Abstract: A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.

公开(公告)号：US20220115838A1

公开(公告)日：2022-04-14

申请号：US17450918

申请日：2021-10-14

Applicant: Excelitas Technologies Corp.

Inventor： Mark E. Kuznetsov

IPC: H01S5/183 ,  H01S5/068

Abstract: Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs/AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low refractive index L-layers. The tensile strain of AlGaAsP L-layer compensates compressive strain of InGaAs H-layer and lowers the cumulative strain of the multilayer DBR structure. Another option is the InGaAsN(Sb)/AlGaAsP material system, where both types of layers can be lattice matched to GaAs. It uses indium In and nitrogen N, and possibly antimony Sb, to get independent control of strain and bandgap, and thus refractive index, of dilute nitride InGaAsN(Sb) H-layers, with lower bandgap and higher refractive index than starting GaAs. Using expanded material system enables reliable DBR mirrors with higher reflectivity and spectral bandwidth and tunable VCSELs with wider tuning range.