公开(公告)号：US10854765B2

公开(公告)日：2020-12-01

申请号：US16257412

申请日：2019-01-25

Applicant: Emberion Oy

Inventor： Mark Allen ,  Alexander Bessonov ,  Tapani Ryhänen

IPC: H01L31/0224 ,  H01L31/113 ,  H01L31/0352 ,  H01L31/108

Abstract: A photosensitive device that includes a conductive electrode, a dielectric layer, a sensing electrode composed of a two-dimensional layered material, and a photoactive layer which can be configured to absorb electromagnetic radiation. The photosensitive device also includes a single-ended measurement electrode for determining the electric potential of the sensing electrode.

公开(公告)号：US11069826B2

公开(公告)日：2021-07-20

申请号：US16361473

申请日：2019-03-22

Applicant: EMBERION OY

Inventor： Alexander Bessonov ,  Alan Colli ,  Mark Allen

IPC: H01L31/113 ,  G01J1/44 ,  H01L31/0352 ,  H01L31/028

Abstract: A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

公开(公告)号：US10483423B2

公开(公告)日：2019-11-19

申请号：US16165248

申请日：2018-10-19

Applicant: EMBERION OY

Inventor： Richard White ,  Alexander Bessonov ,  Piers Andrew ,  Mark Allen ,  Elisabetta Spigone ,  Michael Robert Astley

IPC: H01L31/112 ,  H01L31/0352 ,  H01L31/113 ,  H01L31/18

Abstract: An apparatus comprises a layer of channel material, source and drain electrodes configured to enable a flow of electrical current through the channel material, and a layer of quantum dot material configured to generate electron-hole pairs on exposure to electromagnetic radiation to produce a detectable change in the electrical current indicative of one or more of the presence and magnitude of the electromagnetic radiation. The layer of quantum dot material is positioned between the channel material and a layer of conductive material. The layers of channel and conductive material have work functions such that respective built-in electric fields are created at the interfaces between the layer of quantum dot material and the channel and conductive material. The electric field at each interface acts in the same direction to promote separation of the electrons and holes of the electron-hole pairs to facilitate production of the detectable change in electrical current.

公开(公告)号：US11837677B2

公开(公告)日：2023-12-05

申请号：US17298359

申请日：2019-11-28

Applicant: EMBERION OY

Inventor： Alexander Bessonov ,  Mark Allen

IPC: H01L31/105 ,  H01L31/0224

CPC classification number: H01L31/105 ,  H01L31/022408

Abstract: A photodetector which comprises a measurement layer (15) and at least a first photoactive layer (11) which covers the measurement layer (15). The measurement layer (15) may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer (11) exhibits intrinsic semiconductivity.

公开(公告)号：US10566425B2

公开(公告)日：2020-02-18

申请号：US15558237

申请日：2016-03-02

Applicant: EMBERION OY

Inventor： Richard White ,  Mark Allen

IPC: H01L29/16 ,  H01L29/417 ,  H01L27/146 ,  H01L29/423 ,  H01L29/778 ,  H01L27/16 ,  H01L27/20 ,  H01L27/28 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/113 ,  H01L31/18 ,  H01L37/02 ,  H01L41/113 ,  H01L41/314 ,  G01N27/414

Abstract: An apparatus comprising: a plurality of sensors (501) arranged in an array (500), each sensor having a source electrode (504), a drain electrode (503), a gate electrode (505) and a channel, wherein the source electrode and drain electrode are elongate and the channel has a channel width defined by the longitudinal extent of the source and/or drain electrode and a channel length defined by the separation between the source and drain electrodes; a common conductive or semiconductive layer (506), which may be made of graphene, comprising the channels of the sensors (501) and arranged to extend over the plurality of sensors of the array and configured to be in electrical contact with at least the source electrode and the drain electrode of each sensor; and wherein the source electrode or drain electrode of each sensor forms a substantially continuous sensor perimeter at least along the channel width, which substantially encloses the other electrode of each sensor to inhibit the flow of charge carriers beyond the sensor perimeter to inhibit crosstalk between sensors in the array.

公开(公告)号：US10522706B2

公开(公告)日：2019-12-31

申请号：US16183298

申请日：2018-11-07

Applicant: EMBERION OY

Inventor： Alexander Bessonov ,  Mark Allen

IPC: H01L31/028 ,  H01L31/112 ,  H01L31/0352

Abstract: A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The photosensitive field-effect transistor comprises a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current, and a horizontal semiconducting layer in contact with the transistor channel. The semiconducting layer comprises two or more assemblies of semiconducting material. If the two-dimensional material in the transistor channel has a high work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of decreasing work function. If the two-dimensional material in the transistor channel has a low work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of increasing work function. The semiconducting materials may, for example, comprise semiconductor nanocrystals, quantum dots or thin-film semiconducting layers.