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公开(公告)号：US09613858B2
公开(公告)日：2017-04-04
申请号：US14325601
申请日：2014-07-08
Applicant: Enthone Inc.
Inventor： Vincent Paneccasio, Jr. , Xuan Lin , Richard Hurtubise , Qingyun Chen
IPC: C25D5/02 , C25D3/38 , H05K3/42 , H01L21/768 , C25D7/12 , H01L21/288 , H01L23/532
CPC classification number: H01L21/76879 , C25D3/38 , C25D5/02 , C25D7/12 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
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2.发明授权Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers 有权用基于二吡啶基的矫直剂在微电子学中电沉积铜的方法和组合物公开(公告)号：US08771495B2
公开(公告)日：2014-07-08
申请号：US13785946
申请日：2013-03-05
Applicant: Enthone Inc.
Inventor： Vincent Paneccasio, Jr. , Xuan Lin , Richard Hurtubise , Qingyun Chen
CPC classification number: H01L21/76879 , C25D3/38 , C25D5/02 , C25D7/12 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Abstract translation: 一种用于金属化半导体集成电路器件衬底中的通孔特征的方法和组合物，使用作为二吡啶基化合物的矫味剂化合物。
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3.发明申请METHOD AND COMPOSITION FOR ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS 有权用DIPYRIDYL-LEEDER在微电子中电沉积铜的方法和组合物公开(公告)号：US20140322912A1
公开(公告)日：2014-10-30
申请号：US14325601
申请日：2014-07-08
Applicant: Enthone Inc.
Inventor： Vincent Paneccasio, JR. , Xuan Lin , Richard Hurtubise , Qingyun Chen
IPC: H01L21/768 , H01L21/288
CPC classification number: H01L21/76879 , C25D3/38 , C25D5/02 , C25D7/12 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Abstract translation: 一种用于金属化半导体集成电路器件衬底中的通孔特征的方法和组合物，使用作为二吡啶基化合物的矫味剂化合物。
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4.发明申请METHOD AND COMPOSITION FOR ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS 有权用DIPYRIDYL-LEEDER在微电子中电沉积铜的方法和组合物公开(公告)号：US20130241060A1
公开(公告)日：2013-09-19
申请号：US13785946
申请日：2013-03-05
Applicant: ENTHONE INC.
Inventor： Vincent Paneccasio, JR. , Xuan Lin , Richard Hurtubise , Qingyun Chen
IPC: H01L23/532 , H01L21/768
CPC classification number: H01L21/76879 , C25D3/38 , C25D5/02 , C25D7/12 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Abstract translation: 一种用于金属化半导体集成电路器件衬底中的通孔特征的方法和组合物，使用作为二吡啶基化合物的矫味剂化合物。
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