公开(公告)号：US10930701B2

公开(公告)日：2021-02-23

申请号：US16390899

申请日：2019-04-22

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/20 ,  H01L33/08

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

公开(公告)号：US10319780B2

公开(公告)日：2019-06-11

申请号：US15675351

申请日：2017-08-11

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.

公开(公告)号：US09768227B2

公开(公告)日：2017-09-19

申请号：US14470396

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/20 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.