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公开(公告)号：US08212369B2
公开(公告)日：2012-07-03
申请号：US12512606
申请日：2009-07-30
Applicant: Eunsook Chae
Inventor： Eunsook Chae
IPC: H01L23/29
CPC classification number: H01L23/295 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/27416 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29369 , H01L2224/2937 , H01L2224/29386 , H01L2224/29388 , H01L2224/29393 , H01L2224/83191 , H01L2224/83856 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/00 , H01L2924/00014 , H01L2924/05432 , H01L2924/05442 , H01L2924/04642 , H01L2924/0503 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: This invention is a semiconductor wafer having an active side and a back side opposite the active side, which back side is coated with a filled, spin-coatable coating, wherein the coating comprises a resin and a spherical filler characterized by an average particle diameter of greater than 2 μm and a single peak particle size distribution. In another embodiment the invention is a method for producing a spin-coatable, B-stageable coating with a thixotropic index of 1.2 or less. In a third embodiment the invention is a method for producing a coated semiconductor wafer.
Abstract translation: 本发明是一种具有活性侧和与活性侧相反的背面的半导体晶片，该背面涂覆有填充的可旋涂涂层，其中涂层包括树脂和球形填料，其特征在于平均粒径为 大于2μm和单峰粒度分布。 在另一个实施方案中，本发明是用于制备触变指数为1.2或更小的可自旋涂布的B阶涂层的方法。 在第三实施例中，本发明是一种制造涂覆的半导体晶片的方法。
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公开(公告)号：US20100193973A1
公开(公告)日：2010-08-05
申请号：US12512606
申请日：2009-07-30
Applicant: Eunsook Chae
Inventor： Eunsook Chae
CPC classification number: H01L23/295 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/27416 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29369 , H01L2224/2937 , H01L2224/29386 , H01L2224/29388 , H01L2224/29393 , H01L2224/83191 , H01L2224/83856 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/00 , H01L2924/00014 , H01L2924/05432 , H01L2924/05442 , H01L2924/04642 , H01L2924/0503 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: This invention is a semiconductor wafer having an active side and a back side opposite the active side, which back side is coated with a filled, spin-coatable coating, wherein the coating comprises a resin and a spherical filler characterized by an average particle diameter of greater than 2 μm and a single peak particle size distribution. In another embodiment the invention is a method for producing a spin-coatable, B-stageable coating with a thixotropic index of 1.2 or less. In a third embodiment the invention is a method for producing a coated semiconductor wafer.
Abstract translation: 本发明是一种具有活性侧和与活性侧相反的背面的半导体晶片，该背面涂覆有填充的可旋涂涂层，其中涂层包括树脂和球形填料，其特征在于平均粒径为 大于2μm和单峰粒度分布。 在另一个实施方案中，本发明是用于制备触变指数为1.2或更小的可自旋涂布的B阶涂层的方法。 在第三实施例中，本发明是一种制造涂覆的半导体晶片的方法。
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公开(公告)号：US20060235137A1
公开(公告)日：2006-10-19
申请号：US11108398
申请日：2005-04-18
Applicant: Eunsook Chae
Inventor： Eunsook Chae
IPC: C08L29/04
CPC classification number: C09J167/00 , C08F290/06 , C08F290/14 , C08G77/04 , C08K5/0025 , C08K5/1515 , C08L83/04 , C08L2666/02 , C08L2666/22 , C09J151/003 , C09J151/08 , C09J151/085 , C09J163/10 , C09J167/07 , C09J201/02 , H01L24/29 , H01L24/83 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29369 , H01L2224/29386 , H01L2224/29388 , H01L2224/29393 , H01L2224/8385 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , C08L2666/14 , H01L2924/00 , H01L2924/00014 , H01L2924/04642 , H01L2924/0503 , H01L2924/05432 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: Adhesive compositions containing a base compound or resin and an epoxy resin with vinyl functionality, without a curing agent for the epoxy resin, show enhanced stress performance. The compositions can be used in microelectronic applications.
Abstract translation: 含有基础化合物或树脂的粘合剂组合物和具有乙烯基官能团的环氧树脂，而不含环氧树脂的固化剂，表现出增强的应力性能。 该组合物可用于微电子应用。
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