公开(公告)号：US11069781B2

公开(公告)日：2021-07-20

申请号：US16534318

申请日：2019-08-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US20170200790A1

公开(公告)日：2017-07-13

申请号：US15320253

申请日：2015-07-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L29/778 ,  H01L29/808 ,  H01L29/772 ,  H01L29/739 ,  H01L33/26 ,  H01L29/78 ,  H01L29/66 ,  H01L33/00 ,  H01L29/812 ,  H01L21/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/40 ,  H01L29/872

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US20150325660A1

公开(公告)日：2015-11-12

申请号：US14578072

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/22 ,  H01L33/28 ,  H01L29/04

CPC classification number: H01L29/22 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/1066 ,  H01L29/24 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/7722 ,  H01L29/7786 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26 ,  H01L33/28 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract translation: 提供了具有良好半导体特性的结晶多层结构。 特别地，结晶多层结构具有如下良好的电性能：导电性的可控性良好; 并且垂直传导是可能的。 结晶多层结构包括含有单轴取向金属作为主要成分的金属层和直接设置在金属层上的半导体层或其间的另一层并且包含结晶氧化物半导体作为主要成分的金属层。 结晶氧化物半导体包含一种或多种选自镓，铟和铝的金属，并且是单轴取向的。

公开(公告)号：US10439028B2

公开(公告)日：2019-10-08

申请号：US15320253

申请日：2015-07-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: C23C16/44 ,  C23C16/40 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/78 ,  H01L33/00 ,  H01L33/26 ,  H01L33/44 ,  C23C16/448 ,  H01L29/739 ,  H01L29/772 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US20150325659A1

公开(公告)日：2015-11-12

申请号：US14577986

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/22 ,  H01L29/04

CPC classification number: H01L29/22 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/02581 ,  H01L29/04 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7393 ,  H01L29/7722 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.

Abstract translation: 提供了具有良好电性能并可用于半导体器件的结晶多层结构。 结晶多层结构包括基底基板和直接设置在基底基板上的结晶氧化物半导体薄膜，或者其间具有另一层，并且包括刚玉结构的氧化物半导体作为主要成分。 氧化物半导体含有铟和/或镓作为主要成分。 结晶氧化物半导体薄膜含有锗，硅，钛，锆，钒或铌。

公开(公告)号：US11682702B2

公开(公告)日：2023-06-20

申请号：US17114194

申请日：2020-12-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

CPC classification number: H01L29/24 ,  H01L21/0242 ,  H01L21/0262 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/778 ,  H01L29/7722 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/005 ,  H01L33/26 ,  H01L33/44

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US10043664B2

公开(公告)日：2018-08-07

申请号：US15508465

申请日：2015-08-28

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Akio Takatsuka ,  Toshimi Hitora

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L21/24

CPC classification number: H01L21/02565 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/242 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/42

Abstract: A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

公开(公告)号：US20170278706A1

公开(公告)日：2017-09-28

申请号：US15508465

申请日：2015-08-28

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Akio Takatsuka ,  Toshimi Hitora

IPC: H01L21/02 ,  H01L29/04 ,  H01L21/24 ,  H01L29/24

CPC classification number: H01L21/02565 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/242 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/42

Abstract: A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

公开(公告)号：US09379190B2

公开(公告)日：2016-06-28

申请号：US14577986

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/12 ,  H01L29/22 ,  H01L21/02 ,  H01L29/772 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L33/26 ,  H01L33/42

CPC classification number: H01L29/22 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/02581 ,  H01L29/04 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7393 ,  H01L29/7722 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.

Abstract translation: 提供了具有良好电性能并可用于半导体器件的结晶多层结构。 结晶多层结构包括基底基板和直接设置在基底基板上的结晶氧化物半导体薄膜，或者其间具有另一层，并且包括刚玉结构的氧化物半导体作为主要成分。 氧化物半导体含有铟和/或镓作为主要成分。 结晶氧化物半导体薄膜含有锗，硅，钛，锆，钒或铌。

公开(公告)号：US20210119000A1

公开(公告)日：2021-04-22

申请号：US17114194

申请日：2020-12-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L33/44 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/778 ,  H01L29/772 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/00 ,  H01L33/26

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.