公开(公告)号：US11069781B2

公开(公告)日：2021-07-20

申请号：US16534318

申请日：2019-08-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US20190148482A1

公开(公告)日：2019-05-16

申请号：US16245991

申请日：2019-01-11

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/477

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US20170200790A1

公开(公告)日：2017-07-13

申请号：US15320253

申请日：2015-07-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L29/778 ,  H01L29/808 ,  H01L29/772 ,  H01L29/739 ,  H01L33/26 ,  H01L29/78 ,  H01L29/66 ,  H01L33/00 ,  H01L29/812 ,  H01L21/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/40 ,  H01L29/872

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US10535728B2

公开(公告)日：2020-01-14

申请号：US16245991

申请日：2019-01-11

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24 ,  H01L29/786 ,  H01L21/477 ,  H01L29/26 ,  H01L29/66 ,  H01L29/861 ,  H01L29/872

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US20190112703A1

公开(公告)日：2019-04-18

申请号：US16231042

申请日：2018-12-21

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: C23C16/06 ,  H01L21/02 ,  C23C16/448 ,  C30B29/16 ,  C30B25/14 ,  C30B7/14 ,  C23C16/44 ,  C23C16/20 ,  C23C16/40

Abstract: There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

公开(公告)号：US10202685B2

公开(公告)日：2019-02-12

申请号：US14233568

申请日：2013-11-11

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: C23C16/06 ,  C30B7/14 ,  C30B25/14 ,  C23C16/40 ,  C30B29/16 ,  H01L21/02 ,  C23C16/20 ,  C23C16/44 ,  C23C16/448

Abstract: There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

公开(公告)号：US20190043961A1

公开(公告)日：2019-02-07

申请号：US16159540

申请日：2018-10-12

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/43 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872 ,  H01L29/66 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US10128349B2

公开(公告)日：2018-11-13

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/43 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US20180226472A1

公开(公告)日：2018-08-09

申请号：US15945553

申请日：2018-04-04

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora ,  Tomohiro Yamaguchi ,  Tohru Honda

IPC: H01L29/24 ,  C30B29/16 ,  C01G15/00 ,  H01L29/04 ,  C30B29/40 ,  C30B29/22 ,  C30B25/18 ,  C30B25/02 ,  H01L29/12

CPC classification number: H01L29/24 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/72 ,  C30B25/02 ,  C30B25/183 ,  C30B29/16 ,  C30B29/22 ,  C30B29/403 ,  H01L29/04 ,  H01L29/122

Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.

公开(公告)号：US09966439B2

公开(公告)日：2018-05-08

申请号：US14904042

申请日：2014-07-02

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora ,  Tomohiro Yamaguchi ,  Tohru Honda

IPC: H01L21/02 ,  C09K11/80 ,  H01L29/24 ,  C01G15/00 ,  C30B29/16 ,  C30B29/22 ,  C30B25/18 ,  C30B29/40 ,  C30B25/02 ,  H01L29/04 ,  H01L29/12

CPC classification number: H01L29/24 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/72 ,  C30B25/02 ,  C30B25/183 ,  C30B29/16 ,  C30B29/22 ,  C30B29/403 ,  H01L29/04 ,  H01L29/122

Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.