公开(公告)号：US11462746B2

公开(公告)日：2022-10-04

申请号：US15941165

申请日：2018-03-30

Applicant: FLOSFIA INC.

Inventor： Shingo Yagyu ,  Takuto Igawa ,  Toshimi Hitora

IPC: H01M8/0228 ,  H01M8/026 ,  H01M8/0206 ,  C23C16/448 ,  C23C16/40 ,  H01M8/0215 ,  H01M8/10 ,  H01M8/021

Abstract: In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 mΩcm2 or less.

公开(公告)号：US10770553B2

公开(公告)日：2020-09-08

申请号：US16143757

申请日：2018-09-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takashi Shinohe ,  Shingo Yagyu ,  Takuto Igawa

IPC: H01L29/267 ,  H01L29/04 ,  H01L21/02 ,  H01L29/24 ,  H01L29/778 ,  H01L29/737 ,  H01L29/22

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.