公开(公告)号：US20240202418A1

公开(公告)日：2024-06-20

申请号：US18430948

申请日：2024-02-02

Applicant: Flosfia Inc. ,  Mitsubishi Heavy Industries, Ltd.

Inventor： Masato Ito ,  Masaya Mitake ,  Kengo Takeuchi ,  Toshimi Hitora ,  Fujio Okui

IPC: G06F30/392

CPC classification number: G06F30/392

Abstract: A design support apparatus supports design of a component embedded substrate including an embedded electronic component that configures at least a part of a circuit. The apparatus includes a component information acquiring unit that acquires component information containing component identifying information about the electronic component to be incorporated in the substrate, a pad information acquiring unit that acquires pad information about a type and number of electrode pads to be arranged on the substrate based on the component information, a mounting arrangement information acquiring unit that acquires mounting arrangement information about the arrangement of the substrate and another component on a mounting board in which the component embedded substrate is to be incorporated, and a pad arrangement selecting unit that selects the arrangement of the electrode pad on a surface of the substrate based on the mounting arrangement information and the pad information.

公开(公告)号：US11462746B2

公开(公告)日：2022-10-04

申请号：US15941165

申请日：2018-03-30

Applicant: FLOSFIA INC.

Inventor： Shingo Yagyu ,  Takuto Igawa ,  Toshimi Hitora

IPC: H01M8/0228 ,  H01M8/026 ,  H01M8/0206 ,  C23C16/448 ,  C23C16/40 ,  H01M8/0215 ,  H01M8/10 ,  H01M8/021

Abstract: In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 mΩcm2 or less.

公开(公告)号：US11424320B2

公开(公告)日：2022-08-23

申请号：US16313272

申请日：2017-06-30

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US11088242B2

公开(公告)日：2021-08-10

申请号：US16981550

申请日：2020-03-30

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takahiro Sasaki ,  Toshimi Hitora ,  Isao Takahashi

IPC: C30B29/22 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01C7/04 ,  H01L29/872 ,  H01L29/78 ,  H01C7/02

Abstract: As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

公开(公告)号：US11069781B2

公开(公告)日：2021-07-20

申请号：US16534318

申请日：2019-08-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US10460934B2

公开(公告)日：2019-10-29

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi Oshima ,  Shizuo Fujita ,  Kentaro Kaneko ,  Makoto Kasu ,  Katsuaki Kawara ,  Takashi Shinohe ,  Tokiyoshi Matsuda ,  Toshimi Hitora

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

公开(公告)号：US20190148482A1

公开(公告)日：2019-05-16

申请号：US16245991

申请日：2019-01-11

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/477

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US20170200790A1

公开(公告)日：2017-07-13

申请号：US15320253

申请日：2015-07-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L29/778 ,  H01L29/808 ,  H01L29/772 ,  H01L29/739 ,  H01L33/26 ,  H01L29/78 ,  H01L29/66 ,  H01L33/00 ,  H01L29/812 ,  H01L21/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/40 ,  H01L29/872

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US20150194479A1

公开(公告)日：2015-07-09

申请号：US14233699

申请日：2013-09-24

Applicant: FLOSFIA INC.

Inventor： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.

Abstract translation: 提供了包括质量好的刚玉水晶膜的半导体器件。 提供了一种半导体器件，其包括各自具有刚玉晶体结构的基底基板，半导体层和绝缘膜。 具有刚玉晶体结构的材料包括能够用作绝缘膜的许多类型的氧化膜。 由于所有的基底，半导体层和绝缘膜都具有刚玉晶体结构，所以可以在基底基板上实现质量好的半导体层和绝缘膜。

公开(公告)号：US11152208B2

公开(公告)日：2021-10-19

申请号：US16332659

申请日：2017-09-14

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo Fujita ,  Takayuki Uchida ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/458

Abstract: A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×1020/cm3 or less and electron mobility that is 1 cm2/Vs or more.