公开(公告)号：US10460934B2

公开(公告)日：2019-10-29

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi Oshima ,  Shizuo Fujita ,  Kentaro Kaneko ,  Makoto Kasu ,  Katsuaki Kawara ,  Takashi Shinohe ,  Tokiyoshi Matsuda ,  Toshimi Hitora

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

公开(公告)号：US11694894B2

公开(公告)日：2023-07-04

申请号：US17239986

申请日：2021-04-26

Applicant: FLOSFIA INC.

Inventor： Yuichi Oshima ,  Katsuaki Kawara

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  H02M3/335

CPC classification number: H01L21/02565 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0262 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H02M3/33573 ,  H02M3/33576

Abstract: A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.

公开(公告)号：US11804519B2

公开(公告)日：2023-10-31

申请号：US17239931

申请日：2021-04-26

Applicant: FLOSFIA INC. ,  National Institute for Material Science

Inventor： Yuichi Oshima ,  Katsuaki Kawara

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/045 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L29/247

Abstract: A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline κ-Ga2O3 and the second crystal is a single crystal of a crystalline oxide.